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Lorraine < Louisiane < Maine (État)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
003F58 (2010) Improvement of organic solar cells by flexible substrate and ITO surface treatments
00CB71 (2003) Specific heat of CeRhIn5: the pressure-driven transition from antiferromagnetism to heavy-fermion superconductivity
00E036 (2002-07-08) Magnetization in the Ultraquantum Limit
00E137 (2002-06-15) Cyclotron frequency coupled enhancement of Kerr rotation in low refractive index-dielectric/magneto-optic bilayer thin-film structures
00E456 (2002-03-01) Anomalous superconductivity and field-induced magnetism in CeCoIn5
00FA87 (2001-12-31) Critical lateral size for stress domain formation in InAs/GaAs square nanomesas: A multimillion-atom molecular dynamics study
00FB61 (2001-12-01) Fermi surface of the heavy-fermion superconductor CeCoIn5: The de Haas-van Alphen effect in the normal state
00FC39 (2001-11-01) Localized f electrons in CexLa1-xRhIn5: de Haas-van Alphen measurements
00FC40 (2001-11-01) Localized f electrons in CexLa1-xRhIn5: de Haas-van Alphen measurements
00FF24 (2001-08-01) Electronic structure of CeRhIn5: de Haas-van Alphen and energy band calculations
010087 (2001-06-04) Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas
011F24 (2000-06-15) Electronic states in valence and conduction bands of group-III nitrides: Experiment and theory
013B01 (1999-10-04) Localization of Na impurities at the buried CdS/Cu(In,Ga)Se2 heterojunction
014232 (1999-03-08) Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
015F66 (1998-05-01) Selective ionization of group I elements from laser ablated plumes of RbGaSb, K3Ga3As4, and K4In4As6
019D91 (1996-04-15) Spin glass behavior of amorphous Fe5(InTe4)3
019F54 (1996-02-15) Generalized Kohn-Sham schemes and the band-gap problem
01A465 (1996) Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers
01BA89 (1995-04-24) Selective removal of potassium from K4In4Sb6 via laser ablation/ionization
01D579 (1994-08-01) Gain enhancement in InAlAs/InGaAs heterojunction bipolar transistors using an emitter ledge

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