AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Haute-Normandie »
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Géorgie (États-Unis) < Haute-Normandie < Hawaï  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 43.
[20-40] [0 - 20][0 - 43][40-42][40-60]
Ident.Authors (with country if any)Title
014966 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
014A44 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
014B35 (1999) Polarization-independent double phase conjugate mirror
015659 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
015757 (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
016D32 (1998) Local environment of indium in Ge2333Se6467In12 chalcogenide glass
016D92 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
017564 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
017565 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
017634 (1998) An EXAFS investigation of the local order around indium in Ge-Se-In glasses
017675 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
017915 (1997-11) Dependence on temperature of two-wave mixing in InP:Fe at three different wavelengths: an extended two-defect model
018043 (1997-02-24) Comment on Purely optical measurement of the resistivity distribution of semi-insulating InP:Fe by means of the photorefractive effect [Appl. Phys. Lett. 67, 392 (1995)]
018234 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
019417 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
019418 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
01B319 (1996) About the coordination number of indium in GexSe1-x-yIny glasses
01B648 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing
01BE42 (1995) Contribution au développement d'un capteur en couche mince pour la mesure de champ magnétique
01D499 (1994-09) Photorefractive effect in InP:Fe dominated by holes at room temperature: influence of the indirect transitions
01FB58 (1993) Mapping of dopant concentrations in photorefractive InP : Fe wafers : Physique du traitement des faisceaux lumineux et des images

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