District de Fribourg-en-Brisgau < District de Giessen < District de Haute-Bavière

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 130.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000855 (2013)		Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
000C36 (2013)		Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE
001636 (2012)		Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W
002723 (2011)		Power Scaling of CW and Pulsed IR and mid-IR OPSLs
003A92 (2010)		Polarization conservation and dephasing in InAs quantum dot ensembles
005126 (2009)		Intra-dot relaxation and dephasing rates from time-resolved photoluminescence from InAs quantum dot ensembles
005329 (2009)		Handheld Terahertz Spectrometer for the Detection of Liquid Explosives
005C60 (2008)		Temperature Dependence of radiative and Auger losses in quantum well lasers
006468 (2008)		Influence of GaInP ordering on the electronic quality of concentrator solar cells
006587 (2008)		Highly Strained InGaAs/GaAs Vertical-External-Cavity Surface-Emitting Laser for the Generation of Coherent Yellow-Orange Light
007180 (2007)		Relaxation and recombination in InAs quantum dots
008F51 (2006)		Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
009306 (2005)		Time-resolved photoluminescence of type-I and type-II (GaIn)As/Ga(NAs) heterostructures
009899 (2005)		Nanosecond scale carrier dynamics of self-assembled InAs/AlAs quantum dots studied by time-resolved photoluminescence
009952 (2005)		Microscopic evaluation of spontaneous emission- and auger-processes in semiconductor lasers
009982 (2005)		Many-body dynamics and exciton formation studied by time-resolved photoluminescence
00A211 (2005)		Bound-to-bound and bound-to-free transitions in surface photovoltage spectra : Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
00A813 (2004-02-02)		Enhanced weak Anderson localization phenomena in the magnetoresistance of n-type (Ga,In)(N,As)
00AC59 (2004)		Spin flip from dark to bright states in InP quantum dots
00AC73 (2004)		Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
00B179 (2004)		MOVPE growth of (A1GaIn)P/(GaIn)P heterostructures using TBP

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