List of bibliographic references
Number of relevant bibliographic references: 37.
| Ident. | Authors (with country if any) | Title |
|---|
| 005404 (2009) |
| Flip Chip Bonding of 68 x 68 MWIR LED Arrays |
| 00A688 (2004-03-15) |
| Optical properties of Cd1-xZnxTe films in a device structure using variable angle spectroscopic ellipsometry |
| 00A828 (2004-02-01) |
| Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capacitance profiling |
| 00BE41 (2003-11-03) |
| Square-lattice photonic crystal microcavities for coupling to single InAs quantum dots |
| 00C057 (2003-08-15) |
| Wet chemical cleaning of InP surfaces investigated by in situ and ex situ infrared spectroscopy |
| 00C167 (2003-07-15) |
| Optical characterization of CuIn1-xGaxSe2 alloy thin films by spectroscopic ellipsometry |
| 00C435 (2003-05) |
| Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates |
| 00C709 (2003-01-25) |
| Diffusion of Zn in TPV materials: GaSb, InGaSb, InGaAsSb and InAsSbP |
| 00DE66 (2002-09-02) |
| Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates |
| 00DF55 (2002-08-12) |
| High-efficiency solar cells based on Cu(InAl)Se2 thin films |
| 00E110 (2002-06-17) |
| Effect of Ga content on defect states in CuIn1-xGaxSe2 photovoltaic devices |
| 00E138 (2002-06-15) |
| CuIn1-xAlxSe2 thin films and solar cells |
| 00E645 (2002-01-01) |
| Ionizing radiation effects in copper indium gallium diselenide thin-film solar cells |
| 013974 (1999-11-15) |
| Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs |
| 013C18 (1999-09-01) |
| Phonon Raman scattering in A2Mn2O7 (A=Tl,In,Y) |
| 014208 (1999-03-10) |
| Pseudo-closed box diffusion of Zn into InGaAsSb and AlGaSb for TPV devices |
| 014222 (1999-03-10) |
| AlxGa1-xSb window layers for InGaAsSb/GaSb thermophotovoltaic cells |
| 014255 (1999-03-05) |
| Chemical kinetics and equilibrium analysis of I-III-VI films |
| 014258 (1999-03-05) |
| Analysis of Cu(In,Ga)Se2 solar cells: Why performance decreases with increasing Ga content |
| 014262 (1999-03-05) |
| A non-vacuum process for forming CuInSe2 |
| 016348 (1998-01-15) |
| Wafer fused p-InP/p-GaAs heterojunctions |
| 017927 (1997-10-27) |
| Band gap bowing and refractive index spectra of polycrystalline AlxIn1-xN films deposited by sputtering |
| 017A23 (1997-09-15) |
| Phases, morphology, and diffusion in CuInxGa1-xSe2 thin films |
| 017F17 (1997-04-05) |
| Technology development versus new ideas development by universities |
| 018082 (1997-02-15) |
| Fabrication and characterization of Cu(InGa)Se2 solar cells with absorber bandgap from 1.0 to 1.5 eV |
| 019662 (1996-12-15) |
| Liquid phase epitaxial growth of InGaAs on InP using rare-earth-treated melts |
| 019C77 (1996-05-06) |
| Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C |
| 019C94 (1996-05-01) |
| Device and material characterization of Cu(InGa)Se2 solar cells with increasing band gap |
| 01A015 (1996-01-25) |
| Processing and analysis of polycrystalline thin-film solar cells made from uniform single phase materials |
| 01A943 (1996) |
| MSM photodiodes |
| 01B436 (1995-12-25) |
| Preparation of homogeneous Cu(InGa)Se2 films by selenization of metal precursors in H2Se atmosphere |
| 01B921 (1995-06-19) |
| Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy |
| 01BD87 (1995-01-05) |
| An InGaAsSb/GaSb photovoltaic cell by liquid-phase epitaxy for thermophotovoltaic (TPV) application |
| 01D383 (1994-10-10) |
| In0.53Ga0.47As metal-semiconductor-metal photodiodes with transparent cadmium tin oxide Schottky contacts |
| 01D733 (1994-06-30) |
| Chemical process and device analysis of CuInSe2-based solar cell materials |
| 01DC05 (1994-01-01) |
| Magnetic, electrical, and small-angle neutron-scattering studies of possible long-range order in the pyrochlores Tl2Mn2O7 and In2Mn2O7 |
| 01DC07 (1994-01-01) |
| High-repetition-rate femtosecond optical parametric oscillator based on CsTiOAsO4 |
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