AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

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Index « AffRegion.i » - entrée « Connecticut »
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Communauté valencienne < Connecticut < Dakota du Sud  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
00A592 (2004-04-12) InAs/GaP/InGaP high-temperature power Schottky rectifier
00A609 (2004-04-05) Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission
00A755 (2004-03) Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications
00A845 (2004-01-26) Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength
00C000 (2003-09-01) Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars
00C576 (2003-03-10) Influence of intrinsic strain on the surface acoustic wave-induced birefringence in InGaAs-GaAs and InGaAsP-InP multiple-quantum-well optical modulators
00C595 (2003-03-01) Injection cascade lasers with graded gap barriers
00DC95 (2002-11-15) Analytical method for finding the general optical properties of semiconductor deep centers
00FF68 (2001-07-12) Radio indium and gallium labeled porphyrins for medical imaging
00FF88 (2001-07-01) Modulation doped InGaAsP quantum well laser emitting at 1.55 μm
010480 (2001-02-12) Correlation of defect profiles with carrier profiles of InAs epilayers on GaP
011D17 (2000-08-21) Growth temperature dependence of transport properties of InAs epilayers grown on GaP
011F82 (2000-05-29) Reliable contacts to two-dimensional conduction layers
012013 (2000-05-15) Enhanced optical gain in InGaN-AlGaN quantum wire and quantum dot lasers due to excitonic transitions
012397 (2000-02-01) Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP
013C99 (1999-08-15) Comment on lasing emission from an In0.1Ga0.9N vertical cavity surface emitting laser
014271 (1999-03-01) Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe-ZnMgSSe and InGaN-AlGaN pseudomorphic quantum dots
015B16 (1998-10-05) Facet roughness analysis for InGaN/GaN lasers with cleaved facets
018179 (1997-01-01) Optical characterization of InGaAs-GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators
019671 (1996-12-15) An envelope function description of the quantum well formed in AlxGa1-xAsySb1-y/InAs/AlxGa1-xAsySb1-y heterostructures
019B73 (1996-06-15) Electron-spectroscopic study of vertical In1-xGaxAs quantum dots

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