Serveur d'exploration sur l'Indium - Repository (Accueil)

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List of bibliographic references

Number of relevant bibliographic references: 77.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
006408 (2008) Intrinsic magnetic properties of In2O3 and transition metal-doped-In2O3
006512 (2008) In2O3:Ge, a promising n-type thermoelectric oxide composite
006F57 (2007) Synthesis and material properties of Cu-III-VI2 chalcopyrite thin films
007019 (2007) Study of Ir/WO3/ZrO2-SiO2 ring opening catalysts. Part I: Characterization
007589 (2007) Magnetic properties of bulk Fe-doped indium oxide
007C00 (2007) Effect of annealing on In2S3 thin films prepared by flash evaporation
007C96 (2007) DC and high-frequency conductivity of CuInSe2 bulk crystals
007D66 (2007) Comparative study of sputtered and electrodeposited CI(S, Se) and CIGSe thin films
007E23 (2007) Cation ordering in the fluorite-like transparent conductors In4+xSn3- 2xSbxO12 and In6TeO12
008267 (2006) Survival improvement in patients with medullary thyroid carcinoma who undergo pretargeted anti-carcinoembryonic- antigen radioimmunotherapy : A collaborative study with the french endocrine tumor group
008340 (2006) Structural properties of quaternary InAlGaN MQW grown by plasma-assisted MBE
008842 (2006) Meta-GGA calculation of the electronic structure of group III-V nitrides
008950 (2006) Investigation of InN layers grown by MOCVD using analytical and high resolution TEM : The structure, band gap, role of the buffer layers
008B66 (2006) Growth and characterization of CuInxGa1-xTe2 used for photovoltaic conversion
008B83 (2006) Full-potential study of d-electrons effects on the electronic structure of wurtzite and zinc-blende InN
008B84 (2006) Full-potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk
008C35 (2006) Fabrication and characterisation of CuInSe2/Si(1 0 0) thin films by the stacked elemental layer (SEL) technique
009252 (2005) V-defects and dislocations in InGaN/GaN heterostructures
009347 (2005) The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2-2xMxSnxO3
009796 (2005) Ordering effects on the electronic structures of A1N/GaN, InN/GaN and InN/AlN superlattices
009A77 (2005) Interfacial structure of MBE grown InN on GaN

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