Russie < République de Chine (Taïwan) < République de Macédoine (pays)

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List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
00A429 (2004-06-01)		Energy levels of a parabolically confined quantum dot in the presence of spin-orbit interaction
00A651 (2004-04)		Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
00A652 (2004-04)		Efficient Improvement of Hot-Carrier-Induced Devices Degradation for Sub-0.1 μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
00A793 (2004-02-15)		From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots
00BE86 (2003-10-27)		Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
00C007 (2003-09-01)		Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
00C021 (2003-09-01)		Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction
00C282 (2003-06-15)		Effects of Ag and In addition on the optical properties and crystallization kinetics of eutectic Sb70Te30 phase-change recording film
00C327 (2003-06)		InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
00C411 (2003-05-01)		Simulation of blue InGaN quantum-well lasers
00C779 (2003-01)		Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices
00DB83 (2002-12-30)		Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering
00DD77 (2002-10-15)		Energy states and magnetization in nanoscale quantum rings
00E051 (2002-07-01)		Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates
00E562 (2002-02-04)		Direct determination of atomic structure in multiple quantum wells InGaN/GaN
00FB39 (2001-12-15)		Electron energy state dependence on the shape and size of semiconductor quantum dots
00FB50 (2001-12-03)		Tunneling current through a quantum dot array
00FE31 (2001-09-03)		Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
00FF09 (2001-08-13)		Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure
010048 (2001-06-15)		Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
010216 (2001-05)		Numerical indicator field emission display using carbon nanotubes as emitters

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