Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « Pays » - entrée « Cuba »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Croatie < Cuba < Côte d'Ivoire  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 37.
[0-20] [0 - 20][0 - 37][20-36][20-40]
Ident.Authors (with country if any)Title
001D21 (2012) Electric field gradient calculations in ZnO samples implanted with 111In(111Cd)
002E53 (2011) Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy
004D37 (2009) Pressure dependence of the Raman active vibrations in InP-CdS hybrid nanoparticles
005025 (2009) Markovian and Non-Markovian Light-Emission Channels in Strained Quantum Wires
005610 (2009) Effects of microwave radiation on electrodeposition processes at tin-doped indium oxide (ITO) electrodes
006058 (2008) Peculiarities of nitrogen dioxide detection with sprayed undoped and indium-doped zinc oxide thin films
007B97 (2007) Effect of applied hydrostatic pressure on the e-h ground transition in self-assembled InAs/GaAs quantum lens
008B39 (2006) Growth of polycrystalline InP thin films by the pulsed laser deposition technique
009B19 (2005) Influence of Te doping in ingaassb epilayers on the non- radiative recombination time studied by the photoacoustic technique
009B36 (2005) Indium determination in different environmental materials by electrothermal atomic absorption spectrometry with amberlite XAD-2 coated with 1-(2-pyridylazo)-2-naphthol
009E54 (2005) Electroreflectance spectroscopy in self-assembled quantum dots : lens symmetry
00A118 (2005) Confinement factor, near and far field patterns in InGaN MQW laser diodes
00A137 (2005) Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes
00A420 (2004-06-01) Quantum lens in an external electric field: Anomalous photoluminescence behavior
00AA94 (2004) The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot
00B723 (2004) Estimation of drift mobility in InGaAsP semiconducting alloys from photoluminescence at 77 and 300 K
00E984 (2002) Structural analysis of TiO2 films grown using microwave-activated chemical bath deposition
00EB06 (2002) Role of the conducting layer substrate on TiO2 nucleation when using microwave activated chemical bath deposition
00F622 (2002) Differential capacitance for the AlN/GaN heterostructure field effect transistors
00FF12 (2001-08-13) Measurement of the Auger lifetime in GaInAsSb/GaSb heterostructures using the photoacoustic technique
010994 (2001) Separation of gallium and indium from ores matrix by sorption on Amberlite XAD-2 coated with PAN

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffPays.i -k "Cuba" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffPays.i  \
                -Sk "Cuba" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Main/Repository/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    indexItem
   |index=    AffPays.i
   |clé=    Cuba
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024