RFID tag < RHEED < RHEED diffraction

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List of bibliographic references

Number of relevant bibliographic references: 481.
[20-40] [0 - 20][0 - 50][40-60]

Ident.	Authors (with country if any)	Title
002E53 (2011)		Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy
003C26 (2010)		Nucleation and growth evolution of InP dots on InGaP/GaAs
004120 (2010)		Formation of InAs quantum dots at ultrahigh growth rates
004397 (2010)		Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate
004618 (2010)		Changes in the valence band structure of as-g rown InN(0001)-2 X 2 surfaces upon exposure to oxygen and water
004957 (2009)		The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
004965 (2009)		The growth and characterization of an InN layer on AIN/Si (111)
004E32 (2009)		PAMBE growth and in-situ characterisation of clean (2 x 2) and (√3×3) R30° reconstructed InN(0001) thin films
005058 (2009)		Low-temperature annealing effects on (Ga,Mn)As/Zn-GaAs superlattice structures grown on GaAs(001) substrates
005150 (2009)		Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
005182 (2009)		Indium-induced superstructures formed on Si(1 1 0) surfaces
005211 (2009)		InGaN nanorod arrays grown by molecular beam epitaxy : Growth mechanism structural and optical properties
005403 (2009)		Formation of In0.5Ga0.5As ring-and-hole structure by droplet molecular beam epitaxy
005429 (2009)		Fast carrier relaxation of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers for ultrafast nonlinear optical switching applications
005787 (2009)		Critical thickness for InAs quantum dot formation on (311)B InP substrates
005B97 (2008)		The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
005D74 (2008)		Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
005F26 (2008)		Quasi-one-dimensional In atomic chains on Si(111) at low temperature studied by reflection high-energy positron diffraction and scanning tunneling microscopy
006014 (2008)		Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors
006245 (2008)		Molecular beam epitaxy growth of ZnxCd(1-x)Se/Znx'Cdy'Mg(1-x'-y')Se-InP quantum cascade structures
006644 (2008)		Growth of InN on Ge(11 1) by molecular beam epitaxy using a GaN buffer

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