Reims < Rennes < Rennes Rennes

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List of bibliographic references

Number of relevant bibliographic references: 155.
[20-40] [0 - 20][0 - 50][40-60]

Ident.	Authors (with country if any)	Title
007D14 (2007)		Crystal structure of the new ternary compound Ce3Ru2In3
007E00 (2007)		Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
007E21 (2007)		Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type
007E98 (2007)		Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation : Application to quantum dot-wetting layer system and Auger relaxation
007F02 (2007)		Analysis of the double laser emission occurring in 1.55-μm InAs-InP (113)B quantum-dot lasers
008016 (2006)		Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
008017 (2006)		Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
008018 (2006)		Régime impulsionnel 300fs, 100 pJ, autodémarrant généré par un laser à fibre Er3+ avec absorbant saturable InGaAs/InP dopés fer ultrarapide
008019 (2006)		Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
008021 (2006)		Génération d'impulsions courtes dans un laser à fibre dopée erbium grâce à la combinaison d'un absorbant saturable rapide et d'effets de polarisation
008332 (2006)		Structure and thermal behaviour of ScK(C2O4)2(H2O)2 and InRb1-x(H3O)x(C2O4)2(H2O)2.0.5(H2O) : Two members of a family of open-framework oxalates with isotypic helical structures and zeolite-like properties
008418 (2006)		Single crystal investigation of Ce6Pd12In5
008456 (2006)		Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
008965 (2006)		Interface formation and structural properties of iron films on Al0.48In0.52As (001)
008C63 (2006)		Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber
008E80 (2006)		Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
009020 (2006)		Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
009058 (2006)		Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
009490 (2005)		Structural and electronic properties of BAs and B========exist;Ga1-xAs, BxIn1-xAs alloys
009817 (2005)		Optical properties of Yb3+ ions in halogeno-sulphide glasses
009E47 (2005)		Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

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