Photoelectrochemical etching of p-InP in nitric acid solutions
Identifieur interne : 01A704 ( Main/Repository ); précédent : 01A703; suivant : 01A705Photoelectrochemical etching of p-InP in nitric acid solutions
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Abstract
Photoelectrochemical (PEC) studies of p-lnP in various nitric acid solutions demonstrated that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a small decrease with still lower potentials. Etch rates are proportional to light intensity. The values of etch rate for p-lnP biased at -1.0 V vary from 0.07 to 1.24 μm/min for HNO3 solutions with concentrations ranging from 1.0 to 5.0 M. With acid concentrations greater than 5 M, the etch rates were inconsistent. Little or no PEC etching was observed with nitric acid concentrations greater than 7.5 M. Voltammetry shows that photoreduction of protons and possibly nitric acid takes precedence over the photoreduction of InP to In in higher HNO3 concentrations.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoelectrochemical etching of p-InP in nitric acid solutions</title><author><name sortKey="Quinlan, K P" uniqKey="Quinlan K">K. P. Quinlan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Electronic Materials Branch, EM Materials Technology Division, Rome Laboratory, Hanscom Air Force Base</s1><s2>Massachusetts 01731-2909</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Massachusetts 01731-2909</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">96-0440418</idno><date when="1996">1996</date><idno type="stanalyst">PASCAL 96-0440418 INIST</idno><idno type="RBID">Pascal:96-0440418</idno><idno type="wicri:Area/Main/Corpus">01A752</idno><idno type="wicri:Area/Main/Repository">01A704</idno></publicationStmt><seriesStmt><idno type="ISSN">0013-4651</idno><title level="j" type="abbreviated">J. Electrochem. Soc.</title><title level="j" type="main">Journal of the Electrochemical Society</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acidic solution</term><term>Electrochemical reaction</term><term>Electrodes</term><term>Experimental study</term><term>Indium Phosphides</term><term>Nitric acid</term><term>P type semiconductor</term><term>Photoelectrochemical etching</term><term>Photoelectrochemistry</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Photoélectrochimie</term><term>Gravure photoélectrochimique</term><term>Réaction électrochimique</term><term>Electrode</term><term>Semiconducteur type p</term><term>Indium Phosphure</term><term>Solution acide</term><term>Nitrique acide</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Photoelectrochemical (PEC) studies of p-lnP in various nitric acid solutions demonstrated that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a small decrease with still lower potentials. Etch rates are proportional to light intensity. The values of etch rate for p-lnP biased at -1.0 V vary from 0.07 to 1.24 μm/min for HNO<sub>3</sub> solutions with concentrations ranging from 1.0 to 5.0 M. With acid concentrations greater than 5 M, the etch rates were inconsistent. Little or no PEC etching was observed with nitric acid concentrations greater than 7.5 M. Voltammetry shows that photoreduction of protons and possibly nitric acid takes precedence over the photoreduction of InP to In in higher HNO<sub>3</sub> concentrations.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0013-4651</s0></fA01><fA02 i1="01"><s0>JESOAN</s0></fA02><fA03 i2="1"><s0>J. Electrochem. Soc.</s0></fA03><fA05><s2>143</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoelectrochemical etching of p-InP in nitric acid solutions</s1></fA08><fA11 i1="01" i2="1"><s1>QUINLAN (K. P.)</s1></fA11><fA14 i1="01"><s1>Electronic Materials Branch, EM Materials Technology Division, Rome Laboratory, Hanscom Air Force Base</s1><s2>Massachusetts 01731-2909</s2><s3>USA</s3><sZ>1 aut.</sZ></fA14><fA20><s2>L200-L202</s2></fA20><fA21><s1>1996</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>4925</s2><s5>354000066276660090</s5></fA43><fA44><s0>0000</s0><s1>© 1996 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>96-0440418</s0></fA47><fA60><s1>P</s1><s3>CR</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of the Electrochemical Society</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Photoelectrochemical (PEC) studies of p-lnP in various nitric acid solutions demonstrated that the semiconductor undergoes etching with favorable etch rates in the negative potential region. The etch rate increases with decreasing potentials to -1.0 V and exhibits a small decrease with still lower potentials. Etch rates are proportional to light intensity. The values of etch rate for p-lnP biased at -1.0 V vary from 0.07 to 1.24 μm/min for HNO<sub>3</sub> solutions with concentrations ranging from 1.0 to 5.0 M. With acid concentrations greater than 5 M, the etch rates were inconsistent. Little or no PEC etching was observed with nitric acid concentrations greater than 7.5 M. Voltammetry shows that photoreduction of protons and possibly nitric acid takes precedence over the photoreduction of InP to In in higher HNO<sub>3</sub> concentrations.</s0></fC01><fC02 i1="01" i2="X"><s0>001C01H07</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Experimentelle Untersuchung</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Estudio experimental</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Photoélectrochimie</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Photoelectrochemistry</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fotoelectroquímica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Gravure photoélectrochimique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Photoelectrochemical etching</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Grabado fotoelectroquímico</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Réaction électrochimique</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Electrochemical reaction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Reacción electroquímica</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Electrode</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Electrodes</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Elektrode</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Electrodo</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Semiconducteur type p</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>P type semiconductor</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="GER"><s0>P Leiter</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Semiconductor tipo p</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Indium Phosphure</s0><s1>ACT</s1><s2>NC</s2><s2>NA</s2><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Indium Phosphides</s0><s1>ACT</s1><s2>NC</s2><s2>NA</s2><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Indio Fosfuro</s0><s1>ACT</s1><s2>NC</s2><s2>NA</s2><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Solution acide</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Acidic solution</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Solución ácida</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Nitrique acide</s0><s1>SOL</s1><s2>NK</s2><s5>10</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Nitric acid</s0><s1>SOL</s1><s2>NK</s2><s5>10</s5></fC03><fC03 i1="09" i2="X" l="GER"><s0>Salpetersaeure</s0><s1>SOL</s1><s2>NK</s2><s5>10</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Nítrico ácido</s0><s1>SOL</s1><s2>NK</s2><s5>10</s5></fC03><fN21><s1>303</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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