Reactive intermixing at the Au-InP(100) interface : new photoemission results
Identifieur interne : 01A594 ( Main/Repository ); précédent : 01A593; suivant : 01A595Reactive intermixing at the Au-InP(100) interface : new photoemission results
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Abstract
Using photoelectron emission at different photon energies we have studied the interaction of gold (up to ten monolayers nominal coverage) deposited at room temperature and at T= 110 K on InP(100)-(4x2) surfaces. From the analysis of core-level and valence-band spectra, we derive information on interfacial reactions and overlayer growth modes. At T=110 K interface disruption is small and we observed a rather homogeneous gold overlayer with only a minute concentration of In after deposition of 10 ML of Au. At T=300 K severe disruption occurs, and up to 10 ML of Au an In concentration of at least 10% is clearly identified. Annealing to T= 560 K leads to the formation of InXAu1-x clusters with x up to 0.3.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Reactive intermixing at the Au-InP(100) interface : new photoemission results</title><author><name sortKey="Sloboshanin, S" uniqKey="Sloboshanin S">S. Sloboshanin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Physik, Technische Universität Ilmenau</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>Technische Universität Ilmenau</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Engelhard, H" uniqKey="Engelhard H">H. Engelhard</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fachbereich Physik, Universität Kassel, Heinrich-Plett-Strasse 40</s1><s2>34132 Kassel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author><author><name sortKey="Stietz, F" uniqKey="Stietz F">F. Stietz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Physik, Technische Universität Ilmenau</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>Technische Universität Ilmenau</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Schaefer, J A" uniqKey="Schaefer J">J. A. Schaefer</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut für Physik, Technische Universität Ilmenau</s1><s2>98684 Ilmenau</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>98684 Ilmenau</wicri:noRegion><wicri:noRegion>Technische Universität Ilmenau</wicri:noRegion><wicri:noRegion>98684 Ilmenau</wicri:noRegion></affiliation></author><author><name sortKey="Goldmann, A" uniqKey="Goldmann A">A. Goldmann</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Fachbereich Physik, Universität Kassel, Heinrich-Plett-Strasse 40</s1><s2>34132 Kassel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Hesse (Land)</region><region type="district" nuts="2">District de Kassel</region><settlement type="city">Cassel (Hesse)</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0135694</idno><date when="1996">1996</date><idno type="stanalyst">PASCAL 97-0135694 INIST</idno><idno type="RBID">Pascal:97-0135694</idno><idno type="wicri:Area/Main/Corpus">01A159</idno><idno type="wicri:Area/Main/Repository">01A594</idno></publicationStmt><seriesStmt><idno type="ISSN">0039-6028</idno><title level="j" type="abbreviated">Surf. sci.</title><title level="j" type="main">Surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gold</term><term>Indium phosphides</term><term>Interface reaction</term><term>Photoelectron spectroscopy</term><term>Semiconductor materials</term><term>Solid-solid interfaces</term><term>X radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Interface solide solide</term><term>Matériau semiconducteur</term><term>Or</term><term>Indium phosphure</term><term>Spectrométrie photoélectron</term><term>Réaction interface</term><term>Rayon X</term><term>6835F</term><term>7960J</term><term>InP</term><term>Au</term><term>In P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Or</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using photoelectron emission at different photon energies we have studied the interaction of gold (up to ten monolayers nominal coverage) deposited at room temperature and at T= 110 K on InP(100)-(4x2) surfaces. From the analysis of core-level and valence-band spectra, we derive information on interfacial reactions and overlayer growth modes. At T=110 K interface disruption is small and we observed a rather homogeneous gold overlayer with only a minute concentration of In after deposition of 10 ML of Au. At T=300 K severe disruption occurs, and up to 10 ML of Au an In concentration of at least 10% is clearly identified. Annealing to T= 560 K leads to the formation of In<sub>X</sub>Au<sub>1-x</sub> clusters with x up to 0.3.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0039-6028</s0></fA01><fA02 i1="01"><s0>SUSCAS</s0></fA02><fA03 i2="1"><s0>Surf. sci.</s0></fA03><fA05><s2>369</s2></fA05><fA06><s2>1-3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Reactive intermixing at the Au-InP(100) interface : new photoemission results</s1></fA08><fA11 i1="01" i2="1"><s1>SLOBOSHANIN (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>ENGELHARD (H.)</s1></fA11><fA11 i1="03" i2="1"><s1>STIETZ (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHAEFER (J. 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All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>97-0135694</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Using photoelectron emission at different photon energies we have studied the interaction of gold (up to ten monolayers nominal coverage) deposited at room temperature and at T= 110 K on InP(100)-(4x2) surfaces. From the analysis of core-level and valence-band spectra, we derive information on interfacial reactions and overlayer growth modes. At T=110 K interface disruption is small and we observed a rather homogeneous gold overlayer with only a minute concentration of In after deposition of 10 ML of Au. At T=300 K severe disruption occurs, and up to 10 ML of Au an In concentration of at least 10% is clearly identified. 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