Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
Identifieur interne : 019734 ( Main/Repository ); précédent : 019733; suivant : 019735Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
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Abstract
The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (<1.5 V) dark current densities of the devices. A comparison is made of the correlation between the reverse bias current density and dark line density and it is found that, in this range of strain, the forward bias current density varies more. Two growth methods, molecular beam epitaxy and metal organic vapor phase epitaxy, have been used to produce the wafers and no difference between the growth methods has been found in dark line or current density variations with strain. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes</title><author><name sortKey="Griffin, P R" uniqKey="Griffin P">P. R. Griffin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ</wicri:regionArea><wicri:noRegion>London SW7 2BZ</wicri:noRegion></affiliation></author><author><name sortKey="Barnes, J" uniqKey="Barnes J">J. Barnes</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ</wicri:regionArea><wicri:noRegion>London SW7 2BZ</wicri:noRegion></affiliation></author><author><name sortKey="Barnham, K W J" uniqKey="Barnham K">K. W. J. Barnham</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ</wicri:regionArea><wicri:noRegion>London SW7 2BZ</wicri:noRegion></affiliation></author><author><name sortKey="Haarpaintner, G" uniqKey="Haarpaintner G">G. 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Mazzer</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 1BZ, United Kingdom</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 1BZ</wicri:regionArea><wicri:noRegion>London SW7 1BZ</wicri:noRegion></affiliation></author><author><name sortKey="Zanotti Fregonara, C" uniqKey="Zanotti Fregonara C">C. Zanotti-Fregonara</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 1BZ, United Kingdom</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 1BZ</wicri:regionArea><wicri:noRegion>London SW7 1BZ</wicri:noRegion></affiliation></author><author><name sortKey="Grunbaum, E" uniqKey="Grunbaum E">E. Grunbaum</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Materials, University of Oxford, Oxford OX1 3PH</wicri:regionArea><wicri:noRegion>Oxford OX1 3PH</wicri:noRegion><orgName type="university">Université d'Oxford</orgName><placeName><settlement type="city">Oxford</settlement><region type="nation">Angleterre</region><region type="région" nuts="1">Oxfordshire</region></placeName></affiliation></author><author><name sortKey="Olson, C" uniqKey="Olson C">C. Olson</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ</wicri:regionArea><wicri:noRegion>London SW7 2BZ</wicri:noRegion></affiliation></author><author><name sortKey="Rohr, C" uniqKey="Rohr C">C. Rohr</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ, United Kingdom</s1><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Blackett Laboratory, Imperial College of Science, Technology and Medicine, London SW7 2BZ</wicri:regionArea><wicri:noRegion>London SW7 2BZ</wicri:noRegion></affiliation></author><author><name sortKey="David, J P R" uniqKey="David J">J. P. R. David</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Roberts, J S" uniqKey="Roberts J">J. S. Roberts</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Grey, R" uniqKey="Grey R">R. Grey</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Pate, M A" uniqKey="Pate M">M. A. Pate</name><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>EPSRC III-V Facility, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0111011</idno><date when="1996-11-15">1996-11-15</date><idno type="stanalyst">PASCAL 97-0111011 AIP</idno><idno type="RBID">Pascal:97-0111011</idno><idno type="wicri:Area/Main/Corpus">018A12</idno><idno type="wicri:Area/Main/Repository">019734</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560D</term><term>7340K</term><term>8115H</term><term>6172H</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of the dislocation line density produced by the relaxation of strain in GaAs/In<sub>x</sub>Ga<sub>1-x</sub>As multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (<1.5 V) dark current densities of the devices. A comparison is made of the correlation between the reverse bias current density and dark line density and it is found that, in this range of strain, the forward bias current density varies more. Two growth methods, molecular beam epitaxy and metal organic vapor phase epitaxy, have been used to produce the wafers and no difference between the growth methods has been found in dark line or current density variations with strain. © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes</s1></fA08><fA11 i1="01" i2="1"><s1>GRIFFIN (P. R.)</s1></fA11><fA11 i1="02" i2="1"><s1>BARNES (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>BARNHAM (K. W. 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