Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells
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Abstract
We have measured photoluminescence and electroluminescence in two different types of high-brightness single-quantum-well light emitting diodes manufactured by Nichia Chemical Industries with InxGa1-xN active layers (x=0.45 and x=0.15), under hydrostatic pressures up to 8 GPa. We discovered that the pressure shift of the primary luminescence peak in each diode is very small: 12 and 16 meV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN (≃40 meV/GPa) or the energy gap in InN (≃33 meV/GPa). This kind of behavior is usually associated with recombination processes involving localized states. These localized states may be associated either with band tails (arising from In fluctuations in the active layer or from high density of defects), and/or with localized excitons of various types. © 1997 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells</title><author><name sortKey="Perlin, Piotr" uniqKey="Perlin P">Piotr Perlin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Iota, Valentin" uniqKey="Iota V">Valentin Iota</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Physics Department, SUNY at Buffalo, Buffalo, New York 14260-1500</s1><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">État de New York</region></placeName><wicri:cityArea>Physics Department, SUNY at Buffalo, Buffalo</wicri:cityArea></affiliation></author><author><name sortKey="Weinstein, Bernard A" uniqKey="Weinstein B">Bernard A. Weinstein</name></author><author><name sortKey="Wisniewski, Przemek" uniqKey="Wisniewski P">Przemek Wisniewski</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>High Pressure Research Center Unipress, Sokolowska 29/37 01-142 Warsaw, Poland</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Pologne</country><wicri:regionArea>High Pressure Research Center Unipress, Sokolowska 29/37 01-142 Warsaw</wicri:regionArea><wicri:noRegion>Sokolowska 29/37 01-142 Warsaw</wicri:noRegion></affiliation></author><author><name sortKey="Suski, Tadeusz" uniqKey="Suski T">Tadeusz Suski</name></author><author><name sortKey="Eliseev, Petr G" uniqKey="Eliseev P">Petr. G. Eliseev</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Osinski, Marek" uniqKey="Osinski M">Marek Osinski</name></author></titleStmt><publicationStmt><idno type="inist">97-0567792</idno><date when="1997-06-02">1997-06-02</date><idno type="stanalyst">PASCAL 97-0567792 AIP</idno><idno type="RBID">Pascal:97-0567792</idno><idno type="wicri:Area/Main/Corpus">018374</idno><idno type="wicri:Area/Main/Repository">017D25</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Electroluminescence</term><term>Energy gap</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>High-pressure effects</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>Photoluminescence</term><term>Piezo-optical effects</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7860F</term><term>8140V</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Diode électroluminescente</term><term>Electroluminescence</term><term>Photoluminescence</term><term>Effet haute pression</term><term>Effet piézooptique</term><term>Exciton</term><term>Bande interdite</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have measured photoluminescence and electroluminescence in two different types of high-brightness single-quantum-well light emitting diodes manufactured by Nichia Chemical Industries with In<sub>x</sub>Ga<sub>1-x</sub>N active layers (x=0.45 and x=0.15), under hydrostatic pressures up to 8 GPa. We discovered that the pressure shift of the primary luminescence peak in each diode is very small: 12 and 16 meV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN (≃40 meV/GPa) or the energy gap in InN (≃33 meV/GPa). This kind of behavior is usually associated with recombination processes involving localized states. These localized states may be associated either with band tails (arising from In fluctuations in the active layer or from high density of defects), and/or with localized excitons of various types. © 1997 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>70</s2></fA05><fA06><s2>22</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>PERLIN (Piotr)</s1></fA11><fA11 i1="02" i2="1"><s1>IOTA (Valentin)</s1></fA11><fA11 i1="03" i2="1"><s1>WEINSTEIN (Bernard A.)</s1></fA11><fA11 i1="04" i2="1"><s1>WISNIEWSKI (Przemek)</s1></fA11><fA11 i1="05" i2="1"><s1>SUSKI (Tadeusz)</s1></fA11><fA11 i1="06" i2="1"><s1>ELISEEV (Petr. G.)</s1></fA11><fA11 i1="07" i2="1"><s1>OSINSKI (Marek)</s1></fA11><fA14 i1="01"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Physics Department, SUNY at Buffalo, Buffalo, New York 14260-1500</s1><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>High Pressure Research Center Unipress, Sokolowska 29/37 01-142 Warsaw, Poland</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081</s1><sZ>6 aut.</sZ></fA14><fA20><s1>2993-2995</s1></fA20><fA21><s1>1997-06-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. 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