Microscopic 2DEG linear Hall probe arrays
Identifieur interne : 016C49 ( Main/Repository ); précédent : 016C48; suivant : 016C50Microscopic 2DEG linear Hall probe arrays
Auteurs : RBID : Pascal:98-0491538Descripteurs français
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Abstract
The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/ GaAs has been prepared by MOCVD. The active area of the array is placed on the top of a mesa 40 μm above the planar contact level. A physical model of the heterostructure including a self-consistent description of coupled Schrödinger and Poisson equations has been solved to better understand the influence of the heterostructure design on its electronic properties. The first device characterization exhibits a sensitivity of 470 V/AT in the magnetic field range ±0.4 T at 77 K.
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<author><name sortKey="Cambel, V" uniqKey="Cambel V">V. Cambel</name>
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<author><name sortKey="Olejnikova, B" uniqKey="Olejnikova B">B. Olejnikova</name>
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<author><name sortKey="Elias, P" uniqKey="Elias P">P. Elias</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Hall effect devices</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Magnetic field measurement</term>
<term>Measurement sensor</term>
<term>Semiconductor devices</term>
<term>Ternary compounds</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>0755G</term>
<term>Etude expérimentale</term>
<term>Capteur mesure</term>
<term>Mesure champ magnétique</term>
<term>Dispositif effet Hall</term>
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<term>Indium phosphure</term>
<term>Gallium phosphure</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>InGaP</term>
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<front><div type="abstract" xml:lang="en">The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/ GaAs has been prepared by MOCVD. The active area of the array is placed on the top of a mesa 40 μm above the planar contact level. A physical model of the heterostructure including a self-consistent description of coupled Schrödinger and Poisson equations has been solved to better understand the influence of the heterostructure design on its electronic properties. The first device characterization exhibits a sensitivity of 470 V/AT in the magnetic field range ±0.4 T at 77 K.</div>
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