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Microscopic 2DEG linear Hall probe arrays

Identifieur interne : 016C49 ( Main/Repository ); précédent : 016C48; suivant : 016C50

Microscopic 2DEG linear Hall probe arrays

Auteurs : RBID : Pascal:98-0491538

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Abstract

The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/ GaAs has been prepared by MOCVD. The active area of the array is placed on the top of a mesa 40 μm above the planar contact level. A physical model of the heterostructure including a self-consistent description of coupled Schrödinger and Poisson equations has been solved to better understand the influence of the heterostructure design on its electronic properties. The first device characterization exhibits a sensitivity of 470 V/AT in the magnetic field range ±0.4 T at 77 K.

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Pascal:98-0491538

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<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Microscopic 2DEG linear Hall probe arrays</title>
<author>
<name sortKey="Cambel, V" uniqKey="Cambel V">V. Cambel</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Olejnikova, B" uniqKey="Olejnikova B">B. Olejnikova</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Elias, P" uniqKey="Elias P">P. Elias</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Kudela, R" uniqKey="Kudela R">R. Kudela</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Novak, J" uniqKey="Novak J">J. Novak</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author>
<name sortKey="Kucera, M" uniqKey="Kucera M">M. Kucera</name>
<affiliation wicri:level="1">
<inist:fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>842 39 Bratislava</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="inist">98-0491538</idno>
<date when="1998">1998</date>
<idno type="stanalyst">PASCAL 98-0491538 INIST</idno>
<idno type="RBID">Pascal:98-0491538</idno>
<idno type="wicri:Area/Main/Corpus">016090</idno>
<idno type="wicri:Area/Main/Repository">016C49</idno>
</publicationStmt>
<seriesStmt>
<idno type="ISSN">0749-6036</idno>
<title level="j" type="abbreviated">Superlattices microstruct.</title>
<title level="j" type="main">Superlattices and microstructures</title>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Binary compounds</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Hall effect devices</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Magnetic field measurement</term>
<term>Measurement sensor</term>
<term>Semiconductor devices</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>0755G</term>
<term>Etude expérimentale</term>
<term>Capteur mesure</term>
<term>Mesure champ magnétique</term>
<term>Dispositif effet Hall</term>
<term>Dispositif semiconducteur</term>
<term>Hétérostructure</term>
<term>Composé ternaire</term>
<term>Composé binaire</term>
<term>Indium phosphure</term>
<term>Gallium phosphure</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>InGaP</term>
<term>Ga In P</term>
<term>InGaAs</term>
<term>As Ga In</term>
<term>GaAs</term>
<term>As Ga</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/ GaAs has been prepared by MOCVD. The active area of the array is placed on the top of a mesa 40 μm above the planar contact level. A physical model of the heterostructure including a self-consistent description of coupled Schrödinger and Poisson equations has been solved to better understand the influence of the heterostructure design on its electronic properties. The first device characterization exhibits a sensitivity of 470 V/AT in the magnetic field range ±0.4 T at 77 K.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0749-6036</s0>
</fA01>
<fA02 i1="01">
<s0>SUMIEK</s0>
</fA02>
<fA03 i2="1">
<s0>Superlattices microstruct.</s0>
</fA03>
<fA05>
<s2>24</s2>
</fA05>
<fA06>
<s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Microscopic 2DEG linear Hall probe arrays</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>CAMBEL (V.)</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>OLEJNIKOVA (B.)</s1>
</fA11>
<fA11 i1="03" i2="1">
<s1>ELIAS (P.)</s1>
</fA11>
<fA11 i1="04" i2="1">
<s1>KUDELA (R.)</s1>
</fA11>
<fA11 i1="05" i2="1">
<s1>NOVAK (J.)</s1>
</fA11>
<fA11 i1="06" i2="1">
<s1>KUCERA (M.)</s1>
</fA11>
<fA14 i1="01">
<s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1>
<s2>842 39 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20>
<s1>181-188</s1>
</fA20>
<fA21>
<s1>1998</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>20820</s2>
<s5>354000071101830010</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 1998 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>17 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>98-0491538</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i2="1">
<s0>Superlattices and microstructures</s0>
</fA64>
<fA66 i1="01">
<s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>The technology, preparation and first characterization of a microscopic 2DEG Hall probe array are presented. The vertical heterostructure of the array based on InGaP/InGaAs/ GaAs has been prepared by MOCVD. The active area of the array is placed on the top of a mesa 40 μm above the planar contact level. A physical model of the heterostructure including a self-consistent description of coupled Schrödinger and Poisson equations has been solved to better understand the influence of the heterostructure design on its electronic properties. The first device characterization exhibits a sensitivity of 470 V/AT in the magnetic field range ±0.4 T at 77 K.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B00G55G</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>0755G</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Etude expérimentale</s0>
<s5>45</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Experimental study</s0>
<s5>45</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Capteur mesure</s0>
<s5>46</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>Measurement sensor</s0>
<s5>46</s5>
</fC03>
<fC03 i1="03" i2="X" l="GER">
<s0>Messwertaufnehmer</s0>
<s5>46</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Captador medida</s0>
<s5>46</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Mesure champ magnétique</s0>
<s5>47</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Magnetic field measurement</s0>
<s5>47</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Dispositif effet Hall</s0>
<s5>48</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Hall effect devices</s0>
<s5>48</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Dispositif semiconducteur</s0>
<s5>49</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Semiconductor devices</s0>
<s5>49</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Hétérostructure</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Heterostructures</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Composé ternaire</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Ternary compounds</s0>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Composé binaire</s0>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Binary compounds</s0>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG">
<s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>54</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>55</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>56</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE">
<s0>InGaP</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>Ga In P</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>InGaAs</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>As Ga In</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>GaAs</s0>
<s4>INC</s4>
<s5>88</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE">
<s0>As Ga</s0>
<s4>INC</s4>
<s5>89</s5>
</fC03>
<fN21>
<s1>320</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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