Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions
Identifieur interne : 015A53 ( Main/Repository ); précédent : 015A52; suivant : 015A54Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions
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Abstract
The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga0.6In0.4N0.01As0.99 quantum well laser than the higher-N Ga0.75In0.25N0.02As0.98 quantum well laser operating at 1.3 μm. © 1998 Publication Board, Japanese Journal of Applied Physics.
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J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Carrier density</term><term>Gain measurement</term><term>Gallium arsenides</term><term>Indium compounds</term><term>Nitrogen compounds</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>4255P</term><term>Etude théorique</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term><term>Gallium arséniure</term><term>Indium composé</term><term>Azote composé</term><term>Densité porteur charge</term><term>Mesure gain</term><term>Structure bande</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga<sub>0.6</sub>In<sub>0.4</sub>N<sub>0.01</sub>As<sub>0.99</sub> quantum well laser than the higher-N Ga<sub>0.75</sub>In<sub>0.25</sub>N<sub>0.02</sub>As<sub>0.98</sub> quantum well laser operating at 1.3 μm. © 1998 Publication Board, Japanese Journal of Applied Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0098393</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The influences of In and N compositions on the optical gain characteristics of a GaInNAs-GaAs single quantum well are studied theoretically for the first time. When compared with GaInAs, GaInNAs shows a higher optical gain and a longer emission wavelength, under the condition of identical strain. For a given operating wavelength, the higher-In GaInNAs quantum well exhibits a larger optical gain and a smaller carrier leakage than the higher-N GaInNAs quantum well. For example, more than a two-fold improvement in threshold current is expected from the higher-In Ga<sub>0.6</sub>In<sub>0.4</sub>N<sub>0.01</sub>As<sub>0.99</sub> quantum well laser than the higher-N Ga<sub>0.75</sub>In<sub>0.25</sub>N<sub>0.02</sub>As<sub>0.98</sub> quantum well laser operating at 1.3 μm. © 1998 Publication Board, Japanese Journal of Applied Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Azote composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Nitrogen compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Mesure gain</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gain measurement</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Structure bande</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Band structure</s0></fC03><fN21><s1>053</s1></fN21><fN47 i1="01" i2="1"><s0>9906M000418</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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