IndiumV3, Main, Repository, bibRecord, 014967

Simulation of mesa structures for III-V semiconductors under ion beam etching

Identifieur interne : 014967 ( Main/Repository ); précédent : 014966; suivant : 014968

Simulation of mesa structures for III-V semiconductors under ion beam etching

Auteurs : RBID : Pascal:00-0027894

Descripteurs français

Pascal (Inist)
- Conception assistée, Conception circuit, Modélisation, Revêtement pulvérisation, Pulvérisation irradiation, Angle incidence, Semiconducteur, Composé III-V, Lithographie, Formation motif, Gravure faisceau ionique, Argon, Masque, Gallium arséniure, Indium phosphure, 8540B, 8540H, 8105E, Gravure sèche.

English descriptors

KwdEn :
- Angle of incidence, Argon, Circuit design, Computer aided design, Dry etching, Gallium arsenides, III-V compound, Indium phosphide, Ion beam etching, Lithography, Mask, Modeling, Patterning, Semiconductor materials, Sputter coating, Sputtering.

Abstract

An argon Ion Beam Etching (IBE) simulation model has been developed to investigate the mesa profile evolution in III-V semiconductors' technology. Particular attention has been focused on the sputtering yield angular dependence effect, on the influence of the material and 2D-morphology of the mask onto the pattern transfer. Experimental sputtering yield versus ion incidence angle is injected into the simulation model. The equations which govern the surface evolution, stem from the current method of characteristics. The simulated profiles show that the trenching phenomenon can appear by only considering the variation of the sputtering yield versus the etched surface canting. This is obtained when neither the ion reflection nor the electric field line deviation are taken into account. On the other hand, the slope transfer from the mask to the GaAs and InP substrates is studied.

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Pascal:00-0027894

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Simulation of mesa structures for III-V semiconductors under ion beam etching</title>
<author><name sortKey="Houlet, L" uniqKey="Houlet L">L. Houlet</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Plasmas et des Conches Minces, Institut des Matériaux de Nautes<sup>b</sup>
, Université de Nantes, B.P., 32229. 2, Rue de la Houssinière</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Pays de la Loire</region>
<settlement type="city">Nantes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Rhallabi, A" uniqKey="Rhallabi A">A. Rhallabi</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Plasmas et des Conches Minces, Institut des Matériaux de Nautes<sup>b</sup>
, Université de Nantes, B.P., 32229. 2, Rue de la Houssinière</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Pays de la Loire</region>
<settlement type="city">Nantes</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Turban, G" uniqKey="Turban G">G. Turban</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Plasmas et des Conches Minces, Institut des Matériaux de Nautes<sup>b</sup>
, Université de Nantes, B.P., 32229. 2, Rue de la Houssinière</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Pays de la Loire</region>
<settlement type="city">Nantes</settlement>
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<publicationStmt><idno type="inist">00-0027894</idno>
<date when="1999">1999</date>
<idno type="stanalyst">PASCAL 00-0027894 INIST</idno>
<idno type="RBID">Pascal:00-0027894</idno>
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<seriesStmt><idno type="ISSN">1286-0042</idno>
<title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title>
<title level="j" type="main">EPJ. Applied physics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Angle of incidence</term>
<term>Argon</term>
<term>Circuit design</term>
<term>Computer aided design</term>
<term>Dry etching</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>Indium phosphide</term>
<term>Ion beam etching</term>
<term>Lithography</term>
<term>Mask</term>
<term>Modeling</term>
<term>Patterning</term>
<term>Semiconductor materials</term>
<term>Sputter coating</term>
<term>Sputtering</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Conception assistée</term>
<term>Conception circuit</term>
<term>Modélisation</term>
<term>Revêtement pulvérisation</term>
<term>Pulvérisation irradiation</term>
<term>Angle incidence</term>
<term>Semiconducteur</term>
<term>Composé III-V</term>
<term>Lithographie</term>
<term>Formation motif</term>
<term>Gravure faisceau ionique</term>
<term>Argon</term>
<term>Masque</term>
<term>Gallium arséniure</term>
<term>Indium phosphure</term>
<term>8540B</term>
<term>8540H</term>
<term>8105E</term>
<term>Gravure sèche</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">An argon Ion Beam Etching (IBE) simulation model has been developed to investigate the mesa profile evolution in III-V semiconductors' technology. Particular attention has been focused on the sputtering yield angular dependence effect, on the influence of the material and 2D-morphology of the mask onto the pattern transfer. Experimental sputtering yield versus ion incidence angle is injected into the simulation model. The equations which govern the surface evolution, stem from the current method of characteristics. The simulated profiles show that the trenching phenomenon can appear by only considering the variation of the sputtering yield versus the etched surface canting. This is obtained when neither the ion reflection nor the electric field line deviation are taken into account. On the other hand, the slope transfer from the mask to the GaAs and InP substrates is studied.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1286-0042</s0>
</fA01>
<fA03 i2="1"><s0>EPJ, Appl. phys. : (Print)</s0>
</fA03>
<fA05><s2>6</s2>
</fA05>
<fA06><s2>3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Simulation of mesa structures for III-V semiconductors under ion beam etching</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>HOULET (L.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>RHALLABI (A.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>TURBAN (G.)</s1>
</fA11>
<fA14 i1="01"><s1>Laboratoire des Plasmas et des Conches Minces, Institut des Matériaux de Nautes<sup>b</sup>
, Université de Nantes, B.P., 32229. 2, Rue de la Houssinière</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA20><s1>273-280</s1>
</fA20>
<fA21><s1>1999</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>26690</s2>
<s5>354000085830400090</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2000 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>20 ref.</s0>
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<fA47 i1="01" i2="1"><s0>00-0027894</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>EPJ. Applied physics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>FRA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>An argon Ion Beam Etching (IBE) simulation model has been developed to investigate the mesa profile evolution in III-V semiconductors' technology. Particular attention has been focused on the sputtering yield angular dependence effect, on the influence of the material and 2D-morphology of the mask onto the pattern transfer. Experimental sputtering yield versus ion incidence angle is injected into the simulation model. The equations which govern the surface evolution, stem from the current method of characteristics. The simulated profiles show that the trenching phenomenon can appear by only considering the variation of the sputtering yield versus the etched surface canting. This is obtained when neither the ion reflection nor the electric field line deviation are taken into account. On the other hand, the slope transfer from the mask to the GaAs and InP substrates is studied.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F06A</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F17</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Conception assistée</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Computer aided design</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Concepción asistida</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Conception circuit</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Circuit design</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Concepción circuito</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Modélisation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Modeling</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Modelización</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Revêtement pulvérisation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Sputter coating</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Revestimiento pulverización</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Sputtering</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Pulverización irradiación</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Angle incidence</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Angle of incidence</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Angulo incidente</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Semiconductor materials</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Lithographie</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Lithography</s0>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Litografía</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Formation motif</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Patterning</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Formacíon motivo</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Gravure faisceau ionique</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Ion beam etching</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Grabado haz iónico</s0>
<s5>16</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Argon</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Argon</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Argón</s0>
<s2>NC</s2>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Masque</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Mask</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Máscara</s0>
<s5>18</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s1>SUB</s1>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s1>SUB</s1>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s1>SUB</s1>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s1>SUB</s1>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s1>SUB</s1>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>8540B</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>8540H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>8105E</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Gravure sèche</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Dry etching</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fN21><s1>017</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Simulation of mesa structures for III-V semiconductors under ion beam etching

Simulation of mesa structures for III-V semiconductors under ion beam etching

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri