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GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

Identifieur interne : 013F11 ( Main/Repository ); précédent : 013F10; suivant : 013F12

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

Auteurs : RBID : Pascal:99-0261558

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Abstract

GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. © 1999 American Institute of Physics.

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<div type="abstract" xml:lang="en">GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH
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