GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
Identifieur interne : 013F11 ( Main/Repository ); précédent : 013F10; suivant : 013F12GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy
Auteurs : RBID : Pascal:99-0261558Descripteurs français
- Pascal (Inist)
- 8560J, 8115H, 7866F, 8530V, 7855C, 8105E, 6865, 7860F, Etude expérimentale, Gallium composé, Indium composé, Diode électroluminescente, Epitaxie jet moléculaire, Puits quantique semiconducteur, Semiconducteur III-V, Semiconducteur bande interdite large, Photoluminescence, TEM, Ségrégation surface, Electroluminescence, Croissance semiconducteur, Largeur raie.
English descriptors
- KwdEn :
- Electroluminescence, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Line widths, Molecular beam epitaxy, Photoluminescence, Semiconductor growth, Semiconductor quantum wells, Surface segregation, TEM, Wide band gap semiconductors, quantum well devices.
Abstract
GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH3. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. © 1999 American Institute of Physics.
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Pascal:99-0261558Le document en format XML
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<front><div type="abstract" xml:lang="en">GaInN and GaN were grown by molecular beam epitaxy on c-plane sapphire using NH<sub>3</sub>
. 9 K photoluminescence performed on both GaInN thin layers and GaInN/GaN multiple-quantum wells (MQWs) exhibits narrow emission (∼50 meV linewidths). Transmission electron microscopy images show sharp GaInN/GaN interfaces and homogeneous GaInN layers. Strong indium surface segregation is also evidenced. Light-emitting diodes were fabricated from 5×GaInN (25 Å)/GaN (35 Å) MQW heterostructures. The 300 K electroluminescence yields blue light at 440 nm. © 1999 American Institute of Physics.</div>
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