Determination of photoluminescence mechanism in InGaN quantum wells
Identifieur interne : 013A97 ( Main/Repository ); précédent : 013A96; suivant : 013A98Determination of photoluminescence mechanism in InGaN quantum wells
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Abstract
We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Determination of photoluminescence mechanism in InGaN quantum wells</title><author><name sortKey="Riblet, Philippe" uniqKey="Riblet P">Philippe Riblet</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author><author><name sortKey="Hirayama, Hideki" uniqKey="Hirayama H">Hideki Hirayama</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author><author><name sortKey="Kinoshita, Atsuhiro" uniqKey="Kinoshita A">Atsuhiro Kinoshita</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author><author><name sortKey="Hirata, Akira" uniqKey="Hirata A">Akira Hirata</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author><author><name sortKey="Sugano, Takuo" uniqKey="Sugano T">Takuo Sugano</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author><author><name sortKey="Aoyagi, Yoshinobu" uniqKey="Aoyagi Y">Yoshinobu Aoyagi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198</wicri:regionArea><wicri:noRegion>351-0198</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0440369</idno><date when="1999-10-11">1999-10-11</date><idno type="stanalyst">PASCAL 99-0440369 AIP</idno><idno type="RBID">Pascal:99-0440369</idno><idno type="wicri:Area/Main/Corpus">014484</idno><idno type="wicri:Area/Main/Repository">013A97</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Localized states</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7866F</term><term>6865</term><term>7320D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term><term>Etat localisé</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In<sub>0.25</sub>Ga<sub>0.75</sub>N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>15</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Determination of photoluminescence mechanism in InGaN quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>RIBLET (Philippe)</s1></fA11><fA11 i1="02" i2="1"><s1>HIRAYAMA (Hideki)</s1></fA11><fA11 i1="03" i2="1"><s1>KINOSHITA (Atsuhiro)</s1></fA11><fA11 i1="04" i2="1"><s1>HIRATA (Akira)</s1></fA11><fA11 i1="05" i2="1"><s1>SUGANO (Takuo)</s1></fA11><fA11 i1="06" i2="1"><s1>AOYAGI (Yoshinobu)</s1></fA11><fA14 i1="01"><s1>The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>2241-2243</s1></fA20><fA21><s1>1999-10-11</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0440369</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In<sub>0.25</sub>Ga<sub>0.75</sub>N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. 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