Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
Identifieur interne : 013A51 ( Main/Repository ); précédent : 013A50; suivant : 013A52Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
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Abstract
We have demonstrated laser action of an InGaN self-assembled quantum dot (QD) laser by optical pumping. We have grown the laser structure with the In0.2Ga0.8N QDs embedded in the active layer, using atmospheric-pressure metalorganic chemical vapor deposition. A clear threshold was observed in the relation between the excitation and emission intensity at room temperature. Above the threshold, the width of the emission peak was below 0.1nm (resolution limit), and the emission was strongly polarized in the transverse electric mode. These results indicate that lasing oscillation in the InGaN self-assembled QD laser has been achieved at room temperature. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser</title><author><name sortKey="Tachibana, Koichi" uniqKey="Tachibana K">Koichi Tachibana</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558</wicri:regionArea><wicri:noRegion>106-8558</wicri:noRegion></affiliation></author><author><name sortKey="Someya, Takao" uniqKey="Someya T">Takao Someya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558</wicri:regionArea><wicri:noRegion>106-8558</wicri:noRegion></affiliation></author><author><name sortKey="Arakawa, Yasuhiko" uniqKey="Arakawa Y">Yasuhiko Arakawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558</wicri:regionArea><wicri:noRegion>106-8558</wicri:noRegion></affiliation></author><author><name sortKey="Werner, Ralph" uniqKey="Werner R">Ralph Werner</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author><author><name sortKey="Forchel, Alfred" uniqKey="Forchel A">Alfred Forchel</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0461624</idno><date when="1999-10-25">1999-10-25</date><idno type="stanalyst">PASCAL 99-0461624 AIP</idno><idno type="RBID">Pascal:99-0461624</idno><idno type="wicri:Area/Main/Corpus">014412</idno><idno type="wicri:Area/Main/Repository">013A51</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Optical pumping</term><term>Photoluminescence</term><term>Quantum well lasers</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term><term>Wide band gap semiconductors</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7866F</term><term>8115G</term><term>8105E</term><term>7855C</term><term>6865</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Laser puits quantique</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Point quantique semiconducteur</term><term>Pompage optique</term><term>Méthode MOCVD</term><term>Croissance semiconducteur</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have demonstrated laser action of an InGaN self-assembled quantum dot (QD) laser by optical pumping. We have grown the laser structure with the In<sub>0.2</sub>Ga<sub>0.8</sub>N QDs embedded in the active layer, using atmospheric-pressure metalorganic chemical vapor deposition. A clear threshold was observed in the relation between the excitation and emission intensity at room temperature. Above the threshold, the width of the emission peak was below 0.1nm (resolution limit), and the emission was strongly polarized in the transverse electric mode. These results indicate that lasing oscillation in the InGaN self-assembled QD laser has been achieved at room temperature. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser</s1></fA08><fA11 i1="01" i2="1"><s1>TACHIBANA (Koichi)</s1></fA11><fA11 i1="02" i2="1"><s1>SOMEYA (Takao)</s1></fA11><fA11 i1="03" i2="1"><s1>ARAKAWA (Yasuhiko)</s1></fA11><fA11 i1="04" i2="1"><s1>WERNER (Ralph)</s1></fA11><fA11 i1="05" i2="1"><s1>FORCHEL (Alfred)</s1></fA11><fA14 i1="01"><s1>Institute of Industrial Science, Research Center for Advanced Science and Technology, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106-8558, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Lehrstuhl fur Technische Physik, Universitat Wurzburg, Am Hubland, 97074 Wurzburg, Germany</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>2605-2607</s1></fA20><fA21><s1>1999-10-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0461624</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have demonstrated laser action of an InGaN self-assembled quantum dot (QD) laser by optical pumping. We have grown the laser structure with the In<sub>0.2</sub>Ga<sub>0.8</sub>N QDs embedded in the active layer, using atmospheric-pressure metalorganic chemical vapor deposition. A clear threshold was observed in the relation between the excitation and emission intensity at room temperature. Above the threshold, the width of the emission peak was below 0.1nm (resolution limit), and the emission was strongly polarized in the transverse electric mode. These results indicate that lasing oscillation in the InGaN self-assembled QD laser has been achieved at room temperature. © 1999 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="06" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Pompage optique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Optical pumping</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>self-assembly</s0><s4>INC</s4></fC03><fN21><s1>291</s1></fN21><fN47 i1="01" i2="1"><s0>9940M000029</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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