Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
Identifieur interne : 013866 ( Main/Repository ); précédent : 013865; suivant : 013867Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots
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Abstract
We have investigated the midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots. Resonant emissions between confined levels are clearly observed at low temperature at around 10 μm wavelength. The unipolar emissions are polarized either in the layer plane or along the z growth axis of the quantum dots. The emissions are associated with hole transitions that involve the ground and the excited hole states. The quenching due to Pauli blocking of the unipolar emission lines involving the hole ground state is observed when this state is completely filled. An intradot nonradiative lifetime τ≃25 ps is deduced for the different levels from the midinfrared emitted power.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots</title><author><name sortKey="Sauvage, S" uniqKey="Sauvage S">S. Sauvage</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay</wicri:regionArea> <placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Boucaud, P" uniqKey="Boucaud P">P. Boucaud</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay</wicri:regionArea> <placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Brunhes, T" uniqKey="Brunhes T">T. Brunhes</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay</wicri:regionArea> <placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Orsay</settlement></placeName><orgName type="university">Université Paris-Sud</orgName></affiliation></author><author><name sortKey="Lemaitre, A" uniqKey="Lemaitre A">A. Lemaitre</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>France Telecom, CNET Bagneux, 196 Av. H. Ravera, 92225 Bagneux, France</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>France Telecom, CNET Bagneux, 196 Av. H. Ravera, 92225 Bagneux</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author><author><name sortKey="Gerard, J M" uniqKey="Gerard J">J.-M. Gerard</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>France Telecom, CNET Bagneux, 196 Av. H. Ravera, 92225 Bagneux, France</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>France Telecom, CNET Bagneux, 196 Av. H. Ravera, 92225 Bagneux</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Bagneux</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0550489</idno><date when="1999-12-15">1999-12-15</date><idno type="stanalyst">PASCAL 99-0550489 AIP</idno><idno type="RBID">Pascal:99-0550489</idno><idno type="wicri:Area/Main/Corpus">013F57</idno><idno type="wicri:Area/Main/Repository">013866</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Nonradiative transitions</term><term>Photoluminescence</term><term>Radiation quenching</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7830F</term><term>7855C</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Extinction rayonnement</term><term>Transition non radiative</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated the midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots. Resonant emissions between confined levels are clearly observed at low temperature at around 10 μm wavelength. The unipolar emissions are polarized either in the layer plane or along the z growth axis of the quantum dots. The emissions are associated with hole transitions that involve the ground and the excited hole states. The quenching due to Pauli blocking of the unipolar emission lines involving the hole ground state is observed when this state is completely filled. An intradot nonradiative lifetime τ≃25 ps is deduced for the different levels from the midinfrared emitted power.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>60</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>SAUVAGE (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>BOUCAUD (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>BRUNHES (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEMAITRE (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>GERARD (J.-M.)</s1></fA11><fA14 i1="01"><s1>Institut dElectronique Fondamentale, UMR CNRS 8622, Bat. 220, Universite Paris-Sud, 91405 Orsay, France</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>France Telecom, CNET Bagneux, 196 Av. H. Ravera, 92225 Bagneux, France</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>15589-15592</s1></fA20><fA21><s1>1999-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0550489</s0></fA47><fA60><s1>P</s1><s3>CC</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated the midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots. Resonant emissions between confined levels are clearly observed at low temperature at around 10 μm wavelength. The unipolar emissions are polarized either in the layer plane or along the z growth axis of the quantum dots. The emissions are associated with hole transitions that involve the ground and the excited hole states. The quenching due to Pauli blocking of the unipolar emission lines involving the hole ground state is observed when this state is completely filled. An intradot nonradiative lifetime τ≃25 ps is deduced for the different levels from the midinfrared emitted power.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H30F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H55C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7830F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Extinction rayonnement</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Radiation quenching</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Transition non radiative</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Nonradiative transitions</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Interface states</s0></fC03><fN21><s1>355</s1></fN21><fN47 i1="01" i2="1"><s0>9949M000540</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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