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Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

Identifieur interne : 012106 ( Main/Repository ); précédent : 012105; suivant : 012107

Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

Auteurs : RBID : Pascal:00-0245798

Descripteurs français

Pascal (Inist)
- 8115H, 8105E, 6172C, 6172V, 6855L, Etude expérimentale, Recuit thermique rapide, Dopage semiconducteur, Hydrogène, Semiconducteur III-V, Gallium arséniure, Indium composé, Croissance semiconducteur, Couche épitaxique semiconductrice, Epitaxie jet chimique, Densité porteur charge, Compensation charge, Passivation.
Wicri :
- concept : Hydrogène.

English descriptors

KwdEn :
- Carrier density, Charge compensation, Chemical beam epitaxy, Experimental study, Gallium arsenides, Hydrogen, III-V semiconductors, Indium compounds, Passivation, Rapid thermal annealing, Semiconductor doping, Semiconductor epitaxial layers, Semiconductor growth.

Abstract

In this article, we investigate the effects of hydrogen (H) on doping of GaInNAs grown by gas-source molecular beam epitaxy with a rf plasma nitrogen radical beam source. Incorporating nitrogen (N) into p-Ga_0.892In_0.108As reduces strain and improves thermal stability. With increasing N concentration, more H, from thermally cracked AsH₃, is incorporated alongside N into GaInAs. H has two effects on GaInNAs: acting as an isolated donor and passivating shallow dopants by forming complexes. With increasing N concentration, the free carrier concentration in the as-grown highly Be-doped Ga_0.892In_0.108N_xAs_1-x is decreased mainly due to H passivation. Rapid thermal annealing (RTA) increases free carrier concentration due to a reduced H level. The as-grown undoped Ga_0.924In_0.076N_0.030As_0.970 sample should be p type without H since N introduces a localized acceptor-like level. Our as-grown undoped sample in n-type 6.9×10¹⁵cm^-3 due to charge compensation with H donors. After 700°C RTA, the film becomes p-type 5.7×10¹⁶cm^-3 due to the reduced H donors. For highly Si-doped GaInNAs (∼1×10¹⁸cm^-3), H mainly passivates the dopants, so the free carrier concentration is increased after RTA. © 2000 American Vacuum Society.

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Le document en format XML

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<author><name sortKey="Xin, H P" uniqKey="Xin H">H. P. Xin</name>
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<author><name sortKey="Tu, C W" uniqKey="Tu C">C. W. Tu</name>
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<author><name sortKey="Geva, M" uniqKey="Geva M">M. Geva</name>
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<title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title>
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<front><div type="abstract" xml:lang="en">In this article, we investigate the effects of hydrogen (H) on doping of GaInNAs grown by gas-source molecular beam epitaxy with a rf plasma nitrogen radical beam source. Incorporating nitrogen (N) into p-Ga<sub>0.892</sub>
In<sub>0.108</sub>
As reduces strain and improves thermal stability. With increasing N concentration, more H, from thermally cracked AsH<sub>3</sub>
, is incorporated alongside N into GaInAs. H has two effects on GaInNAs: acting as an isolated donor and passivating shallow dopants by forming complexes. With increasing N concentration, the free carrier concentration in the as-grown highly Be-doped Ga<sub>0.892</sub>
In<sub>0.108</sub>
N<sub>x</sub>
As<sub>1-x</sub>
 is decreased mainly due to H passivation. Rapid thermal annealing (RTA) increases free carrier concentration due to a reduced H level. The as-grown undoped Ga<sub>0.924</sub>
In<sub>0.076</sub>
N<sub>0.030</sub>
As<sub>0.970</sub>
 sample should be p type without H since N introduces a localized acceptor-like level. Our as-grown undoped sample in n-type 6.9×10<sup>15</sup>
cm<sup>-3</sup>
 due to charge compensation with H donors. After 700°C RTA, the film becomes p-type 5.7×10<sup>16</sup>
cm<sup>-3</sup>
 due to the reduced H donors. For highly Si-doped GaInNAs (∼1×10<sup>18</sup>
cm<sup>-3</sup>
), H mainly passivates the dopants, so the free carrier concentration is increased after RTA. © 2000 American Vacuum Society.</div>
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<fC01 i1="01" l="ENG"><s0>In this article, we investigate the effects of hydrogen (H) on doping of GaInNAs grown by gas-source molecular beam epitaxy with a rf plasma nitrogen radical beam source. Incorporating nitrogen (N) into p-Ga<sub>0.892</sub>
In<sub>0.108</sub>
As reduces strain and improves thermal stability. With increasing N concentration, more H, from thermally cracked AsH<sub>3</sub>
, is incorporated alongside N into GaInAs. H has two effects on GaInNAs: acting as an isolated donor and passivating shallow dopants by forming complexes. With increasing N concentration, the free carrier concentration in the as-grown highly Be-doped Ga<sub>0.892</sub>
In<sub>0.108</sub>
N<sub>x</sub>
As<sub>1-x</sub>
 is decreased mainly due to H passivation. Rapid thermal annealing (RTA) increases free carrier concentration due to a reduced H level. The as-grown undoped Ga<sub>0.924</sub>
In<sub>0.076</sub>
N<sub>0.030</sub>
As<sub>0.970</sub>
 sample should be p type without H since N introduces a localized acceptor-like level. Our as-grown undoped sample in n-type 6.9×10<sup>15</sup>
cm<sup>-3</sup>
 due to charge compensation with H donors. After 700°C RTA, the film becomes p-type 5.7×10<sup>16</sup>
cm<sup>-3</sup>
 due to the reduced H donors. For highly Si-doped GaInNAs (∼1×10<sup>18</sup>
cm<sup>-3</sup>
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Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

Effects of hydrogen on doping of GaInNAs grown by gas-source molecular beam epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri