Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench
Identifieur interne : 011B42 ( Main/Repository ); précédent : 011B41; suivant : 011B43Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench
Auteurs : RBID : Pascal:00-0451316Descripteurs français
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- 4260F, 4255P, 6570, 8165C, 6865, 4260D, Etude expérimentale, Indium composé, Gallium arséniure, Accord fréquence laser, Laser puits quantique, Puits quantique semiconducteur, Dilatation thermique, Contrainte thermique, Laser réaction répartie, Résonateur cavité laser, Résonateur Fabry Pérot, Laser guide onde, Gravure, Semiconducteur III-V.
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Abstract
We have used temperature-dependent strain from differential thermal expansion to increase the temperature tuning rate, dλ/dT, of the modal wavelength of an InP-based laser. The effectiveness of the strain may be further enhanced with a deep trench etch beneath the laser waveguide. We have obtained a 50% increase in the tuning rate, without degradation of the threshold current, and a maximum increase of 86%. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench</title><author><name sortKey="Cohen, D A" uniqKey="Cohen D">D. A. Cohen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Mason, B" uniqKey="Mason B">B. Mason</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Dolan, J" uniqKey="Dolan J">J. Dolan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Burns, C" uniqKey="Burns C">C. Burns</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author><author><name sortKey="Coldren, L A" uniqKey="Coldren L">L. A. Coldren</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0451316</idno><date when="2000-10-23">2000-10-23</date><idno type="stanalyst">PASCAL 00-0451316 AIP</idno><idno type="RBID">Pascal:00-0451316</idno><idno type="wicri:Area/Main/Corpus">012511</idno><idno type="wicri:Area/Main/Repository">011B42</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Distributed feedback lasers</term><term>Etching</term><term>Experimental study</term><term>Fabry-Perot resonators</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser cavity resonators</term><term>Laser tuning</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Thermal expansion</term><term>Thermal stresses</term><term>Waveguide lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4260F</term><term>4255P</term><term>6570</term><term>8165C</term><term>6865</term><term>4260D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Accord fréquence laser</term><term>Laser puits quantique</term><term>Puits quantique semiconducteur</term><term>Dilatation thermique</term><term>Contrainte thermique</term><term>Laser réaction répartie</term><term>Résonateur cavité laser</term><term>Résonateur Fabry Pérot</term><term>Laser guide onde</term><term>Gravure</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have used temperature-dependent strain from differential thermal expansion to increase the temperature tuning rate, dλ/dT, of the modal wavelength of an InP-based laser. The effectiveness of the strain may be further enhanced with a deep trench etch beneath the laser waveguide. We have obtained a 50% increase in the tuning rate, without degradation of the threshold current, and a maximum increase of 86%. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>77</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced wavelength tuning of an InGaAsP-InP laser with a thermal-strain-magnifying trench</s1></fA08><fA11 i1="01" i2="1"><s1>COHEN (D. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MASON (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>DOLAN (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>BURNS (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>COLDREN (L. 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