IndiumV3, Main, Repository, bibRecord, 010898

Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Identifieur interne : 010898 ( Main/Repository ); précédent : 010897; suivant : 010899

Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Auteurs : RBID : Pascal:01-0206593

Descripteurs français

Pascal (Inist)
- Transistor effet champ hyperfréquence, Hétérojonction, Discontinuité bande, Dopage plan, Gravure sélective, Technologie autoalignée, Electrode commande, Caractéristique électrique, Gallium phosphure, Indium phosphure, Gallium arséniure, Composé binaire, Composé ternaire, Ga In P, InGaP, As Ga, GaAs.

English descriptors

KwdEn :
- Band offset, Binary compound, Electrical characteristic, Gallium arsenides, Gallium phosphide, Gates, Heterojunctions, Indium phosphide, Microwave field effect transistors, Planar doping, Selective etching, Self aligned technology, Ternary compound.

Abstract

We report a promising N⁺-InGaP/δ(P⁺)-InGaP/n-GaAs hetero-planar-doped barrier, which is used to fabricate both high-breakdown and self-aligned T-gate (SAT-gate) field-effect transistors (FETs). The characteristics of the devices and comparisons with previous reports are discussed. The enhanced conduction- and valence-band offsets associated with the new hetero-planar doped barrier show high-breakdown behaviour. In addition, high selective etching between InGaP and GaAs layers together with an ohmic gate allows the fabrication of a SAT-gate with a reduced gate-length of 0.8 μm. In the case of a high-breakdown FET, the drain-source breakdown voltage is as high as 32 V. In addition to competitive direct-current (dc) performances, a reduced knee voltage and improved frequency performances are obtained in SAT-gate FETs. The available unity-current-gain and unity-power-gain frequencies are, respectively, 19.5 and 30 GHz achieved as a 0.6 μm gate is obtained by forming a 1 μm metal gate. Furthermore, all the measured SAT-gate FETs exhibit high-linearity and high-uniformity dc and alternating-current performances.

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Pascal:01-0206593

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Studies and comparisons of a N<sup>+</sup>
-InGaP/δ(P<sup>+</sup>
)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors</title>
<author><name sortKey="Lour, W S" uniqKey="Lour W">W. S. Lour</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Taiwan-Ocean University, No 2, Peining Road</s1>
<s2>Keelung</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Keelung</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tsai, M K" uniqKey="Tsai M">M. K. Tsai</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, National Taiwan University, No 1 Sec. 4, Roosevelt, Road</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lai, K Y" uniqKey="Lai K">K. Y. Lai</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Taiwan-Ocean University, No 2, Peining Road</s1>
<s2>Keelung</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Keelung</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chen, B L" uniqKey="Chen B">B. L. Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Taiwan-Ocean University, No 2, Peining Road</s1>
<s2>Keelung</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Keelung</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yang, Y J" uniqKey="Yang Y">Y. J. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, National Taiwan University, No 1 Sec. 4, Roosevelt, Road</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Taïwan</country>
<wicri:noRegion>Taipei</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0206593</idno>
<date when="2001">2001</date>
<idno type="stanalyst">PASCAL 01-0206593 INIST</idno>
<idno type="RBID">Pascal:01-0206593</idno>
<idno type="wicri:Area/Main/Corpus">011372</idno>
<idno type="wicri:Area/Main/Repository">010898</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0268-1242</idno>
<title level="j" type="abbreviated">Semicond. sci. technol.</title>
<title level="j" type="main">Semiconductor science and technology</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band offset</term>
<term>Binary compound</term>
<term>Electrical characteristic</term>
<term>Gallium arsenides</term>
<term>Gallium phosphide</term>
<term>Gates</term>
<term>Heterojunctions</term>
<term>Indium phosphide</term>
<term>Microwave field effect transistors</term>
<term>Planar doping</term>
<term>Selective etching</term>
<term>Self aligned technology</term>
<term>Ternary compound</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor effet champ hyperfréquence</term>
<term>Hétérojonction</term>
<term>Discontinuité bande</term>
<term>Dopage plan</term>
<term>Gravure sélective</term>
<term>Technologie autoalignée</term>
<term>Electrode commande</term>
<term>Caractéristique électrique</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Gallium arséniure</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>Ga In P</term>
<term>InGaP</term>
<term>As Ga</term>
<term>GaAs</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report a promising N<sup>+</sup>
-InGaP/δ(P<sup>+</sup>
)-InGaP/n-GaAs hetero-planar-doped barrier, which is used to fabricate both high-breakdown and self-aligned T-gate (SAT-gate) field-effect transistors (FETs). The characteristics of the devices and comparisons with previous reports are discussed. The enhanced conduction- and valence-band offsets associated with the new hetero-planar doped barrier show high-breakdown behaviour. In addition, high selective etching between InGaP and GaAs layers together with an ohmic gate allows the fabrication of a SAT-gate with a reduced gate-length of 0.8 μm. In the case of a high-breakdown FET, the drain-source breakdown voltage is as high as 32 V. In addition to competitive direct-current (dc) performances, a reduced knee voltage and improved frequency performances are obtained in SAT-gate FETs. The available unity-current-gain and unity-power-gain frequencies are, respectively, 19.5 and 30 GHz achieved as a 0.6 μm gate is obtained by forming a 1 μm metal gate. Furthermore, all the measured SAT-gate FETs exhibit high-linearity and high-uniformity dc and alternating-current performances.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0>
</fA01>
<fA02 i1="01"><s0>SSTEET</s0>
</fA02>
<fA03 i2="1"><s0>Semicond. sci. technol.</s0>
</fA03>
<fA05><s2>16</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Studies and comparisons of a N<sup>+</sup>
-InGaP/δ(P<sup>+</sup>
)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LOUR (W. S.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>TSAI (M. K.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LAI (K. Y.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>CHEN (B. L.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>YANG (Y. J.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Electrical Engineering, National Taiwan-Ocean University, No 2, Peining Road</s1>
<s2>Keelung</s2>
<s3>TWN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, National Taiwan University, No 1 Sec. 4, Roosevelt, Road</s1>
<s2>Taipei</s2>
<s3>TWN</s3>
<sZ>2 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>191-196</s1>
</fA20>
<fA21><s1>2001</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>21041</s2>
<s5>354000094519160020</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2001 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>9 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>01-0206593</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report a promising N<sup>+</sup>
-InGaP/δ(P<sup>+</sup>
)-InGaP/n-GaAs hetero-planar-doped barrier, which is used to fabricate both high-breakdown and self-aligned T-gate (SAT-gate) field-effect transistors (FETs). The characteristics of the devices and comparisons with previous reports are discussed. The enhanced conduction- and valence-band offsets associated with the new hetero-planar doped barrier show high-breakdown behaviour. In addition, high selective etching between InGaP and GaAs layers together with an ohmic gate allows the fabrication of a SAT-gate with a reduced gate-length of 0.8 μm. In the case of a high-breakdown FET, the drain-source breakdown voltage is as high as 32 V. In addition to competitive direct-current (dc) performances, a reduced knee voltage and improved frequency performances are obtained in SAT-gate FETs. The available unity-current-gain and unity-power-gain frequencies are, respectively, 19.5 and 30 GHz achieved as a 0.6 μm gate is obtained by forming a 1 μm metal gate. Furthermore, all the measured SAT-gate FETs exhibit high-linearity and high-uniformity dc and alternating-current performances.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Transistor effet champ hyperfréquence</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Microwave field effect transistors</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="1" l="FRE"><s0>Hétérojonction</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="1" l="ENG"><s0>Heterojunctions</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Discontinuité bande</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Band offset</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Discontinuidad banda</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Dopage plan</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Planar doping</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Doping plano</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Gravure sélective</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Selective etching</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Grabado selectivo</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Technologie autoalignée</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Self aligned technology</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Tecnología rejilla autoalineada</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Electrode commande</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gates</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Gallium phosphure</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Gallium phosphide</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Galio fosfuro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s5>24</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>27</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>28</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>28</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>28</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Ga In P</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>InGaP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fN21><s1>141</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Studies and comparisons of a N+-InGaP/δ(P+)-InGaP/n-GaAs hetero-planar-doped structure to high-linearity microwave field-effect transistors

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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