Suppression of phase separation in (AlAs)2ML(InAs)2ML superlattices using Al0.48In0.52As monolayer insertions
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Suppression of phase separation in (AlAs)2ML(InAs)2ML superlattices using Al0.48In0.52As monolayer insertions
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Abstract
Al0.48In0.52As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)2ML (InAs)2ML short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al0.48In0.52As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs during molecular beam epitaxy of the SPS. The degree of suppression is a sensitive function of both the monolayer-scale thickness, and the intraperiod growth sequence, of the interlayers in the SPS. Given this sensitivity to monolayer-scale variations in the surface-region composition, we propose that cyclical phase transition of the reconstructed surface initiates SPS decomposition. © 2001 American Institute of Physics.
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Reno</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Follstaedt, D M" uniqKey="Follstaedt D">D. M. Follstaedt</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Sandia National Laboratories, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0230107</idno><date when="2001-05-28">2001-05-28</date><idno type="stanalyst">PASCAL 01-0230107 AIP</idno><idno type="RBID">Pascal:01-0230107</idno><idno type="wicri:Area/Main/Corpus">011248</idno><idno type="wicri:Area/Main/Repository">010118</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Molecular beam epitaxy</term><term>Monolayers</term><term>Phase separation</term><term>Semiconductor growth</term><term>Semiconductor superlattices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865C</term><term>8105E</term><term>8115H</term><term>Etude expérimentale</term><term>Séparation phase</term><term>Superréseau semiconducteur</term><term>Aluminium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Couche monomoléculaire</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Al<sub>0.48</sub>In<sub>0.52</sub>As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)<sub>2ML</sub> (InAs)<sub>2ML</sub> short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al<sub>0.48</sub>In<sub>0.52</sub>As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs during molecular beam epitaxy of the SPS. The degree of suppression is a sensitive function of both the monolayer-scale thickness, and the intraperiod growth sequence, of the interlayers in the SPS. 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M.)</s1></fA11><fA14 i1="01"><s1>Sandia National Laboratories, Albuquerque, New Mexico 87185-0601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>3421-3423</s1></fA20><fA21><s1>2001-05-28</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0230107</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Al<sub>0.48</sub>In<sub>0.52</sub>As monolayers (ML) are inserted at the binary-compound interfaces of (AlAs)<sub>2ML</sub> (InAs)<sub>2ML</sub> short-period superlattices (SPSs) during growth on (001) InP. The insertion of Al<sub>0.48</sub>In<sub>0.52</sub>As interlayers greater than 2 ML thick tends to suppress the phase separation that normally occurs during molecular beam epitaxy of the SPS. The degree of suppression is a sensitive function of both the monolayer-scale thickness, and the intraperiod growth sequence, of the interlayers in the SPS. 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