Wafer-fused p-i-n InGaAs/Si photodiode with photogain
Identifieur interne : 00FF08 ( Main/Repository ); précédent : 00FF07; suivant : 00FF09Wafer-fused p-i-n InGaAs/Si photodiode with photogain
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Abstract
Using high temperature fusion of InGaAs/InP on Si, we demonstrated an InGaAs/Si p-i-n photodiode with a photomultiplication gain of 11 at relatively low bias of -15 V. The photodiode exhibited a dark current of 30 nA at -5 V, and a responsivity of 0.3 A/W at 1.32 μm wavelength without antireflection coating. The measured device behavior were consistent with that predicted by a model of charged interface states resulting from the fusion. © 2001 American Institute of Physics.
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<front><div type="abstract" xml:lang="en">Using high temperature fusion of InGaAs/InP on Si, we demonstrated an InGaAs/Si p-i-n photodiode with a photomultiplication gain of 11 at relatively low bias of -15 V. The photodiode exhibited a dark current of 30 nA at -5 V, and a responsivity of 0.3 A/W at 1.32 μm wavelength without antireflection coating. The measured device behavior were consistent with that predicted by a model of charged interface states resulting from the fusion. © 2001 American Institute of Physics.</div>
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