Study of the new β-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films
Identifieur interne : 00E939 ( Main/Repository ); précédent : 00E938; suivant : 00E940Study of the new β-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films
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Abstract
The optical and electrical properties of the new [In16]Oh[In5.33-xNa3x□2.66-2x]TdS32 (BINS) thin films have been studied. The determination of the optical band gap of films containing different rates of sodium has shown that it linearly increases from 2.10eV, when the films are pure β-In2S3, to 2.95 eV, when their sodium content corresponds to x = 0.9 i.e. [In16]Oh[In4.4Na2.7□0.9]TdS32 compound. This evolution of the band gap has been discussed in terms of In-S bond length and electronegativity of Na and In elements. All the BINS thin films have an n-type electrical conductivity, which decreases from 4 × 10 7 to 10-7S cm-1 when x increases from 0.05 to 0.9, respectively. The electrical conductivity of pure β-in2S3 has been found around 2 × 10 8S cm 1, which is lower than that of films containing sodium. The variation of the room conductivity of the films is related to the sodium distribution in the crystalline structure.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Study of the new β-In<sub>2</sub>S<sub>3</sub> containing Na thin films. Part II: Optical and electrical characterization of thin films</title><author><name sortKey="Barreau, N" uniqKey="Barreau N">N. Barreau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPSE, Faculté des Sciences et des Techniques de Nantes, 2 rue de la Houssinière, BP 92208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author><author><name sortKey="Bernede, J C" uniqKey="Bernede J">J. C. Bernede</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPSE, Faculté des Sciences et des Techniques de Nantes, 2 rue de la Houssinière, BP 92208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author><author><name sortKey="Marsillac, S" uniqKey="Marsillac S">S. Marsillac</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>LPSE, Faculté des Sciences et des Techniques de Nantes, 2 rue de la Houssinière, BP 92208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0351066</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 02-0351066 INIST</idno><idno type="RBID">Pascal:02-0351066</idno><idno type="wicri:Area/Main/Corpus">00F048</idno><idno type="wicri:Area/Main/Repository">00E939</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beta phase</term><term>Doping</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Experimental study</term><term>Indium sulfides</term><term>Optical properties</term><term>Optoelectronic devices</term><term>Physical vapor deposition</term><term>Semiconductor materials</term><term>Sodium additions</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche mince</term><term>Semiconducteur</term><term>Indium sulfure</term><term>Phase bêta</term><term>Dopage</term><term>Addition sodium</term><term>Propriété électrique</term><term>Propriété optique</term><term>Dépôt physique phase vapeur</term><term>Conductivité électrique</term><term>Dispositif optoélectronique</term><term>7866L</term><term>7820C</term><term>7361L</term><term>In2S3:Na</term><term>In S</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical and electrical properties of the new [In<sub>16</sub>]<sub>Oh</sub>[In<sub>5.33-x</sub>Na<sub>3x</sub>□<sub>2.66-2x</sub>]<sub>Td</sub>S<sub>32</sub> (BINS) thin films have been studied. The determination of the optical band gap of films containing different rates of sodium has shown that it linearly increases from 2.10eV, when the films are pure β-In<sub>2</sub>S<sub>3</sub>, to 2.95 eV, when their sodium content corresponds to x = 0.9 i.e. [In<sub>16</sub>]<sub>Oh</sub>[In<sub>4.4</sub>Na<sub>2.7</sub>□<sub>0.9</sub>]<sub>Td</sub>S<sub>32</sub> compound. This evolution of the band gap has been discussed in terms of In-S bond length and electronegativity of Na and In elements. All the BINS thin films have an n-type electrical conductivity, which decreases from 4 × 10 <sup>7</sup> to 10<sup>-7</sup>S cm<sup>-1</sup> when x increases from 0.05 to 0.9, respectively. The electrical conductivity of pure β-in<sub>2</sub>S<sub>3</sub> has been found around 2 × 10 <sup>8</sup>S cm <sup>1</sup>, which is lower than that of films containing sodium. The variation of the room conductivity of the films is related to the sodium distribution in the crystalline structure.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>241</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Study of the new β-In<sub>2</sub>S<sub>3</sub> containing Na thin films. Part II: Optical and electrical characterization of thin films</s1></fA08><fA11 i1="01" i2="1"><s1>BARREAU (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>BERNEDE (J. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>MARSILLAC (S.)</s1></fA11><fA14 i1="01"><s1>LPSE, Faculté des Sciences et des Techniques de Nantes, 2 rue de la Houssinière, BP 92208</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>51-56</s1></fA20><fA21><s1>2002</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000101520240080</s5></fA43><fA44><s0>0000</s0><s1>© 2002 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>6 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>02-0351066</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical and electrical properties of the new [In<sub>16</sub>]<sub>Oh</sub>[In<sub>5.33-x</sub>Na<sub>3x</sub>□<sub>2.66-2x</sub>]<sub>Td</sub>S<sub>32</sub> (BINS) thin films have been studied. The determination of the optical band gap of films containing different rates of sodium has shown that it linearly increases from 2.10eV, when the films are pure β-In<sub>2</sub>S<sub>3</sub>, to 2.95 eV, when their sodium content corresponds to x = 0.9 i.e. [In<sub>16</sub>]<sub>Oh</sub>[In<sub>4.4</sub>Na<sub>2.7</sub>□<sub>0.9</sub>]<sub>Td</sub>S<sub>32</sub> compound. This evolution of the band gap has been discussed in terms of In-S bond length and electronegativity of Na and In elements. All the BINS thin films have an n-type electrical conductivity, which decreases from 4 × 10 <sup>7</sup> to 10<sup>-7</sup>S cm<sup>-1</sup> when x increases from 0.05 to 0.9, respectively. The electrical conductivity of pure β-in<sub>2</sub>S<sub>3</sub> has been found around 2 × 10 <sup>8</sup>S cm <sup>1</sup>, which is lower than that of films containing sodium. 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