Thin film CuInS2 prepared by spray pyrolysis with single-source precursors
Identifieur interne : 00E795 ( Main/Repository ); précédent : 00E794; suivant : 00E796Thin film CuInS2 prepared by spray pyrolysis with single-source precursors
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Abstract
Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS2 thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 °C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. Conductive films were deposited with planar electrical resistivities ranging from 1 to 30 Ω ●cm.
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Harris</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>NASA Glenn Research Center</s1><s2>Cleveland, OH 44135</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>NASA Glenn Research Center</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemistry, Cleveland State University</s1><s2>Cleveland, OH 44115</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Cleveland, OH 44115</wicri:noRegion></affiliation></author><author><name sortKey="Cowen, Jonathan E" uniqKey="Cowen J">Jonathan E. Cowen</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Chemistry, Cleveland State University</s1><s2>Cleveland, OH 44115</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Cleveland, OH 44115</wicri:noRegion></affiliation></author><author><name sortKey="Hepp, Aloysius F" uniqKey="Hepp A">Aloysius F. Hepp</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>NASA Glenn Research Center</s1><s2>Cleveland, OH 44135</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>NASA Glenn Research Center</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0267474</idno><date when="2002">2002</date><idno type="stanalyst">PASCAL 04-0267474 INIST</idno><idno type="RBID">Pascal:04-0267474</idno><idno type="wicri:Area/Main/Corpus">00B549</idno><idno type="wicri:Area/Main/Repository">00E795</idno></publicationStmt><seriesStmt><title level="j" type="main">sans titre</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper selenides</term><term>Indium selenides</term><term>Manufacturing process</term><term>Pyrolysis</term><term>Solar cell</term><term>Thin film cell</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Procédé fabrication</term><term>Cellule couche mince</term><term>Pyrolyse</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS<sub>2</sub> thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 °C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. 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All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>04-0267474</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="2"><s0>sans titre</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Both horizontal hot-wall and vertical cold-wall atmospheric chemical spray pyrolysis processes deposited near single-phase stoichiometric CuInS<sub>2</sub> thin films. Single-source precursors developed for ternary chalcopyrite materials were used for this study, and a new liquid phase single-source precursor was tested with a vertical cold-wall reactor. The depositions were carried out under an argon atmosphere, and the substrate temperature was kept at 400 °C. Columnar grain structure was obtained with vapor deposition, and the granular structure was obtained with (liquid) droplet deposition. 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