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Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Identifieur interne : 00E561 ( Main/Repository ); précédent : 00E560; suivant : 00E562

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Auteurs : RBID : Pascal:02-0091425

Descripteurs français

Pascal (Inist)
- 4255P, 7855C, 7866F, Etude expérimentale, Gallium composé, Semiconducteur bande interdite large, Semiconducteur III-V, Recombinaison électron trou, Transparence, Photoluminescence, Laser semiconducteur, Transition non radiative, Indium composé, Aluminium composé.

English descriptors

KwdEn :
- Aluminium compounds, Electron-hole recombination, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Nonradiative transitions, Photoluminescence, Semiconductor lasers, Transparency, Wide band gap semiconductors.

Abstract

Using temperature-dependent and gain measurements, we have examined the laser threshold density of (In,Ga)N/GaN/(Al,Ga)N laser structures with various well widths and different In contents in the active layer. Thermal activation energies, obtained by temperature-dependent photoluminescence measurements at low excitation densities, yield information on the nonradiative recombination channels and demonstrate the existence of two different activation processes. One of them may be related to thermal activation of localized carriers into quasifree states and subsequent nonradiative recombination. The other is attributed to thermal emission of carriers into the barriers. The influence of the barrier height is also reflected by the dependence of the threshold densities required on the temperature. © 2002 American Institute of Physics.

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Pascal:02-0091425

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures</title>
<author><name sortKey="Vehse, M" uniqKey="Vehse M">M. Vehse</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen</wicri:regionArea>
<placeName><region type="land" nuts="3">Brême (Land)</region>
<settlement type="city">Brême</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Michler, P" uniqKey="Michler P">P. Michler</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen</wicri:regionArea>
<placeName><region type="land" nuts="3">Brême (Land)</region>
<settlement type="city">Brême</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gosling, I" uniqKey="Gosling I">I. Gosling</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen</wicri:regionArea>
<placeName><region type="land" nuts="3">Brême (Land)</region>
<settlement type="city">Brême</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Rowe, M" uniqKey="Rowe M">M. Rowe</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen</wicri:regionArea>
<placeName><region type="land" nuts="3">Brême (Land)</region>
<settlement type="city">Brême</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gutowski, J" uniqKey="Gutowski J">J. Gutowski</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen</wicri:regionArea>
<placeName><region type="land" nuts="3">Brême (Land)</region>
<settlement type="city">Brême</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Bader, S" uniqKey="Bader S">S. Bader</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg</wicri:regionArea>
<wicri:noRegion>93049 Regensburg</wicri:noRegion>
<wicri:noRegion>D-93049 Regensburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lell, A" uniqKey="Lell A">A. Lell</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg</wicri:regionArea>
<wicri:noRegion>93049 Regensburg</wicri:noRegion>
<wicri:noRegion>D-93049 Regensburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bruderl, G" uniqKey="Bruderl G">G. Bruderl</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg</wicri:regionArea>
<wicri:noRegion>93049 Regensburg</wicri:noRegion>
<wicri:noRegion>D-93049 Regensburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Harle, V" uniqKey="Harle V">V. Harle</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg</wicri:regionArea>
<wicri:noRegion>93049 Regensburg</wicri:noRegion>
<wicri:noRegion>D-93049 Regensburg</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0091425</idno>
<date when="2002-02-04">2002-02-04</date>
<idno type="stanalyst">PASCAL 02-0091425 AIP</idno>
<idno type="RBID">Pascal:02-0091425</idno>
<idno type="wicri:Area/Main/Corpus">00FD45</idno>
<idno type="wicri:Area/Main/Repository">00E561</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term>
<term>Electron-hole recombination</term>
<term>Experimental study</term>
<term>Gallium compounds</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Nonradiative transitions</term>
<term>Photoluminescence</term>
<term>Semiconductor lasers</term>
<term>Transparency</term>
<term>Wide band gap semiconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>4255P</term>
<term>7855C</term>
<term>7866F</term>
<term>Etude expérimentale</term>
<term>Gallium composé</term>
<term>Semiconducteur bande interdite large</term>
<term>Semiconducteur III-V</term>
<term>Recombinaison électron trou</term>
<term>Transparence</term>
<term>Photoluminescence</term>
<term>Laser semiconducteur</term>
<term>Transition non radiative</term>
<term>Indium composé</term>
<term>Aluminium composé</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Using temperature-dependent and gain measurements, we have examined the laser threshold density of (In,Ga)N/GaN/(Al,Ga)N laser structures with various well widths and different In contents in the active layer. Thermal activation energies, obtained by temperature-dependent photoluminescence measurements at low excitation densities, yield information on the nonradiative recombination channels and demonstrate the existence of two different activation processes. One of them may be related to thermal activation of localized carriers into quasifree states and subsequent nonradiative recombination. The other is attributed to thermal emission of carriers into the barriers. The influence of the barrier height is also reflected by the dependence of the threshold densities required on the temperature. © 2002 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>80</s2>
</fA05>
<fA06><s2>5</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>VEHSE (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MICHLER (P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GOSLING (I.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ROWE (M.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>GUTOWSKI (J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>BADER (S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>LELL (A.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>BRUDERL (G.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>HARLE (V.)</s1>
</fA11>
<fA14 i1="01"><s1>Institut fur Festkorperphysik, Universitat Bremen, P.O. Box 330440, D-28334 Bremen, Germany</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Osram Optosemiconductors GmbH & Company OHG, D-93049 Regensburg, Germany</s1>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA20><s1>755-757</s1>
</fA20>
<fA21><s1>2002-02-04</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2002 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>02-0091425</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Using temperature-dependent and gain measurements, we have examined the laser threshold density of (In,Ga)N/GaN/(Al,Ga)N laser structures with various well widths and different In contents in the active layer. Thermal activation energies, obtained by temperature-dependent photoluminescence measurements at low excitation densities, yield information on the nonradiative recombination channels and demonstrate the existence of two different activation processes. One of them may be related to thermal activation of localized carriers into quasifree states and subsequent nonradiative recombination. The other is attributed to thermal emission of carriers into the barriers. The influence of the barrier height is also reflected by the dependence of the threshold densities required on the temperature. © 2002 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H55C</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Recombinaison électron trou</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Electron-hole recombination</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Transparence</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Transparency</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Transition non radiative</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Nonradiative transitions</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Aluminium composé</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Aluminium compounds</s0>
</fC03>
<fN21><s1>042</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0206M000031</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Influence of the barrier height on carrier recombination and transparency density in GaN-based laser structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri