Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition
Identifieur interne : 00E427 ( Main/Repository ); précédent : 00E426; suivant : 00E428Atomistic simulation of strain relaxation in InxGa1-xAs/GaAs quantum dots with nonuniform composition
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Abstract
We report atomistic simulations of InxGa1-xAs/GaAs quantum dots (QDs) with nonuniform composition. The Tersoff potential is used to model the atomic interactions of an inhomogeneous system of 400000 atoms and to obtain dynamic relaxation through energy minimization. From the relaxed atomistic model, the bond deformations are analyzed in order to predict the strain maps. The same technique is also employed to model the strain relaxation of a cleaved QD, allowing us to study the loss of planarity of the cleavage surface and to compare this with experimental scanning tunneling microscopy results. We confirm that an inverted pyramidlike In composition is likely to generate the topographical maps previously reported.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Atomistic simulation of strain relaxation in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum dots with nonuniform composition</title><author><name sortKey="Migliorato, M A" uniqKey="Migliorato M">M. A. Migliorato</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Cullis, A G" uniqKey="Cullis A">A. G. Cullis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD</wicri:regionArea><wicri:noRegion>Sheffield S1 3JD</wicri:noRegion></affiliation></author><author><name sortKey="Fearn, M" uniqKey="Fearn M">M. Fearn</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>QinetiQ, Sensors & Electronics Sector, St. Andrews Road, Malvern, Worcs. WR14 3PS, United Kingdom</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>QinetiQ, Sensors & Electronics Sector, St. Andrews Road, Malvern, Worcs. WR14 3PS</wicri:regionArea><wicri:noRegion>Worcs. WR14 3PS</wicri:noRegion></affiliation></author><author><name sortKey="Jefferson, J H" uniqKey="Jefferson J">J. H. Jefferson</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>QinetiQ, Sensors & Electronics Sector, St. Andrews Road, Malvern, Worcs. WR14 3PS, United Kingdom</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Royaume-Uni</country><wicri:regionArea>QinetiQ, Sensors & Electronics Sector, St. Andrews Road, Malvern, Worcs. WR14 3PS</wicri:regionArea><wicri:noRegion>Worcs. WR14 3PS</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0160066</idno><date when="2002-03-15">2002-03-15</date><idno type="stanalyst">PASCAL 02-0160066 AIP</idno><idno type="RBID">Pascal:02-0160066</idno><idno type="wicri:Area/Main/Corpus">00F999</idno><idno type="wicri:Area/Main/Repository">00E427</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computerized simulation</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>STM</term><term>Semiconductor quantum dots</term><term>Stress relaxation</term><term>Surface dynamics</term><term>Surface potential</term><term>Surface topography</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>0705T</term><term>6837E</term><term>Etude théorique</term><term>Simulation ordinateur</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Relaxation contrainte</term><term>Point quantique semiconducteur</term><term>Topographie surface</term><term>STM</term><term>Potentiel surface</term><term>Dynamique surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report atomistic simulations of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum dots (QDs) with nonuniform composition. The Tersoff potential is used to model the atomic interactions of an inhomogeneous system of 400000 atoms and to obtain dynamic relaxation through energy minimization. From the relaxed atomistic model, the bond deformations are analyzed in order to predict the strain maps. The same technique is also employed to model the strain relaxation of a cleaved QD, allowing us to study the loss of planarity of the cleavage surface and to compare this with experimental scanning tunneling microscopy results. We confirm that an inverted pyramidlike In composition is likely to generate the topographical maps previously reported.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>65</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Atomistic simulation of strain relaxation in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum dots with nonuniform composition</s1></fA08><fA11 i1="01" i2="1"><s1>MIGLIORATO (M. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>CULLIS (A. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>FEARN (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>JEFFERSON (J. H.)</s1></fA11><fA14 i1="01"><s1>Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>QinetiQ, Sensors & Electronics Sector, St. Andrews Road, Malvern, Worcs. WR14 3PS, United Kingdom</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s2>115316-115316-5</s2></fA20><fA21><s1>2002-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0160066</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report atomistic simulations of In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum dots (QDs) with nonuniform composition. The Tersoff potential is used to model the atomic interactions of an inhomogeneous system of 400000 atoms and to obtain dynamic relaxation through energy minimization. From the relaxed atomistic model, the bond deformations are analyzed in order to predict the strain maps. The same technique is also employed to model the strain relaxation of a cleaved QD, allowing us to study the loss of planarity of the cleavage surface and to compare this with experimental scanning tunneling microscopy results. We confirm that an inverted pyramidlike In composition is likely to generate the topographical maps previously reported.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B00G05T</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A16C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>0705T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6837E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Simulation ordinateur</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Computerized simulation</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Relaxation contrainte</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Stress relaxation</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Topographie surface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surface topography</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>STM</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>STM</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Potentiel surface</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Surface potential</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Dynamique surface</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Surface dynamics</s0></fC03><fN21><s1>084</s1></fN21><fN47 i1="01" i2="1"><s0>0212M001227</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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