Two-step As-desorption from (001) InP observed by surface photoabsorption
Identifieur interne : 00E043 ( Main/Repository ); précédent : 00E042; suivant : 00E044Two-step As-desorption from (001) InP observed by surface photoabsorption
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Abstract
The investigation of As desorption from the (001) InP during metalorganic chemical vapor deposition was performed using surface photoabsorption (SPA). The behavior of the monochromatic SPA signal showed a clear existence of a metastable state after the AsH3 was turned off. SPA spectra at each stable surface were taken to confirm the interpretation. This result indicates that the previous criterion to measure the amount of As/P exchange reaction is not necessarily correct and that the As-desorption process should be understood as a two-step process. © 2002 American Institute of Physics.
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Ihn</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Seong, G Y" uniqKey="Seong G">G. Y. Seong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Kim, Y D" uniqKey="Kim Y">Y. D. Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Lee, T W" uniqKey="Lee T">T. W. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Hwang, H" uniqKey="Hwang H">H. Hwang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Yoon, S" uniqKey="Yoon S">S. Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author><author><name sortKey="Yoon, E" uniqKey="Yoon E">E. Yoon</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742</wicri:regionArea><placeName><settlement type="city">Séoul</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0341700</idno><date when="2002-07-01">2002-07-01</date><idno type="stanalyst">PASCAL 02-0341700 AIP</idno><idno type="RBID">Pascal:02-0341700</idno><idno type="wicri:Area/Main/Corpus">00F084</idno><idno type="wicri:Area/Main/Repository">00E043</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adsorbed layers</term><term>Chemical exchanges</term><term>Desorption</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Visible spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6843M</term><term>7840F</term><term>8230H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Désorption</term><term>Spectre visible</term><term>Echange chimique</term><term>Couche adsorbée</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The investigation of As desorption from the (001) InP during metalorganic chemical vapor deposition was performed using surface photoabsorption (SPA). The behavior of the monochromatic SPA signal showed a clear existence of a metastable state after the AsH<sub>3</sub> was turned off. SPA spectra at each stable surface were taken to confirm the interpretation. This result indicates that the previous criterion to measure the amount of As/P exchange reaction is not necessarily correct and that the As-desorption process should be understood as a two-step process. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Two-step As-desorption from (001) InP observed by surface photoabsorption</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (T. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>IHN (Y. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEONG (G. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>KIM (Y. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>LEE (T. W.)</s1></fA11><fA11 i1="06" i2="1"><s1>HWANG (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>YOON (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>YOON (E.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 130-701, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>School of Materials Science and Engineering and ISRC, Seoul National University, Seoul 151-742, Korea</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>61-63</s1></fA20><fA21><s1>2002-07-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0341700</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The investigation of As desorption from the (001) InP during metalorganic chemical vapor deposition was performed using surface photoabsorption (SPA). The behavior of the monochromatic SPA signal showed a clear existence of a metastable state after the AsH<sub>3</sub> was turned off. SPA spectra at each stable surface were taken to confirm the interpretation. This result indicates that the previous criterion to measure the amount of As/P exchange reaction is not necessarily correct and that the As-desorption process should be understood as a two-step process. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H45D</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H40F</s0></fC02><fC02 i1="03" i2="X"><s0>001C01A02</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6843M</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7840F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8230H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Désorption</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Desorption</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectre visible</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Visible spectra</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Echange chimique</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Chemical exchanges</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche adsorbée</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Adsorbed layers</s0></fC03><fN21><s1>182</s1></fN21><fN47 i1="01" i2="1"><s0>0226M000085</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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