IndiumV3, Main, Repository, bibRecord, 00E007

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Identifieur interne : 00E007 ( Main/Repository ); précédent : 00E006; suivant : 00E008

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Auteurs : RBID : Pascal:02-0419879

Descripteurs français

Pascal (Inist)
- 6835B, 6835D, 6835F, 6835C, Etude expérimentale, Indium composé, Semiconducteur III-V, Croissance semiconducteur, Composé organique, Arsenic composé, Méthode MOCVD, Revêtement MOCVD, Topographie surface, Couche épitaxique semiconductrice, Diffusion(transport), Contrainte interne, Structure îlot.

English descriptors

KwdEn :
- Arsenic compounds, Diffusion, Experimental study, III-V semiconductors, Indium compounds, Internal stresses, Island structure, MOCVD, MOCVD coatings, Organic compounds, Semiconductor epitaxial layers, Semiconductor growth, Surface topography.

Abstract

We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP (001) film to 10 mTorr of tertiarybutylarsine below 500°C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick (2.3-7.5 Å). The surface of this epilayer remains atomically smooth independent of arsenic exposure time. However, in an overpressure of tertiarybutylarsine at or above 500°C, the arsenic atoms diffuse into the bulk, creating strained InAsP films. These films form three-dimensional island structures to relieve the built-up strain. The activation energy and pre-exponential factor for arsenic diffusion into indium phosphide have been determined to be E_d=1.7±0.2 eV and D_o=2.3±1.0×10^-7 cm²/s.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 00EB48

Links to Exploration step

Pascal:02-0419879

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy</title>
<author><name sortKey="Law, D C" uniqKey="Law D">D. C. Law</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Sun, Y" uniqKey="Sun Y">Y. Sun</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Li, C H" uniqKey="Li C">C. H. Li</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Visbeck, S B" uniqKey="Visbeck S">S. B. Visbeck</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Chen, G" uniqKey="Chen G">G. Chen</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Hicks, R F" uniqKey="Hicks R">R. F. Hicks</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Californie</region>
</placeName>
<wicri:cityArea>Department of Chemical Engineering, University of California, Los Angeles</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0419879</idno>
<date when="2002-07-15">2002-07-15</date>
<idno type="stanalyst">PASCAL 02-0419879 AIP</idno>
<idno type="RBID">Pascal:02-0419879</idno>
<idno type="wicri:Area/Main/Corpus">00EB48</idno>
<idno type="wicri:Area/Main/Repository">00E007</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1098-0121</idno>
<title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title>
<title level="j" type="main">Physical review. B, Condensed matter and materials physics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic compounds</term>
<term>Diffusion</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Internal stresses</term>
<term>Island structure</term>
<term>MOCVD</term>
<term>MOCVD coatings</term>
<term>Organic compounds</term>
<term>Semiconductor epitaxial layers</term>
<term>Semiconductor growth</term>
<term>Surface topography</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>6835B</term>
<term>6835D</term>
<term>6835F</term>
<term>6835C</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Semiconducteur III-V</term>
<term>Croissance semiconducteur</term>
<term>Composé organique</term>
<term>Arsenic composé</term>
<term>Méthode MOCVD</term>
<term>Revêtement MOCVD</term>
<term>Topographie surface</term>
<term>Couche épitaxique semiconductrice</term>
<term>Diffusion(transport)</term>
<term>Contrainte interne</term>
<term>Structure îlot</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP (001) film to 10 mTorr of tertiarybutylarsine below 500°C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick (2.3-7.5 Å). The surface of this epilayer remains atomically smooth independent of arsenic exposure time. However, in an overpressure of tertiarybutylarsine at or above 500°C, the arsenic atoms diffuse into the bulk, creating strained InAsP films. These films form three-dimensional island structures to relieve the built-up strain. The activation energy and pre-exponential factor for arsenic diffusion into indium phosphide have been determined to be E<sub>d</sub>
=1.7±0.2 eV and D<sub>o</sub>
=2.3±1.0×10<sup>-7</sup>
 cm<sup>2</sup>
/s.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0>
</fA01>
<fA02 i1="01"><s0>PRBMDO</s0>
</fA02>
<fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0>
</fA03>
<fA05><s2>66</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>LAW (D. C.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SUN (Y.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LI (C. H.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>VISBECK (S. B.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CHEN (G.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HICKS (R. F.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Chemical Engineering, University of California, Los Angeles, California 90095</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s2>045314-045314-7</s2>
</fA20>
<fA21><s1>2002-07-15</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>144 B</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2002 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>02-0419879</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP (001) film to 10 mTorr of tertiarybutylarsine below 500°C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick (2.3-7.5 Å). The surface of this epilayer remains atomically smooth independent of arsenic exposure time. However, in an overpressure of tertiarybutylarsine at or above 500°C, the arsenic atoms diffuse into the bulk, creating strained InAsP films. These films form three-dimensional island structures to relieve the built-up strain. The activation energy and pre-exponential factor for arsenic diffusion into indium phosphide have been determined to be E<sub>d</sub>
=1.7±0.2 eV and D<sub>o</sub>
=2.3±1.0×10<sup>-7</sup>
 cm<sup>2</sup>
/s.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35B</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H35D</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60H35F</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H35C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>6835B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>6835D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>6835F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>6835C</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Croissance semiconducteur</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor growth</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Composé organique</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Organic compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Arsenic composé</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Arsenic compounds</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>MOCVD</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Revêtement MOCVD</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>MOCVD coatings</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Topographie surface</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Surface topography</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Diffusion(transport)</s0>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Diffusion</s0>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Contrainte interne</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Internal stresses</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Structure îlot</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Island structure</s0>
</fC03>
<fN21><s1>238</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0233M000761</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00E007 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00E007 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:02-0419879
   |texte=   Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri