Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser
Identifieur interne : 00DC10 ( Main/Repository ); précédent : 00DC09; suivant : 00DC11Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser
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Abstract
Data are presented demonstrating the cw 300 K visible spectrum (654 nm) laser operation of a single 7.5 monolayer InP quantum dot (QD) layer coupled by a 20 Å In0.5Al0.3Ga0.2P barrier to an auxiliary 70 Å In0.5Ga0.5P quantum well (QW) that, via resonant tunneling, assists carrier collection, thermalization, and lateral rearrangement in the QDs. The simple stripe-geometry (530 μm×10 μm) InP QD+InGaP QW heterostructure laser, enhanced by the QW and operating on an upper QD state (42% quantum efficiency), is capable of over 10 mW/facet cw 300 K operation in spite of the weak heat sinking of probe operation. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser</title><author><name sortKey="Walter, G" uniqKey="Walter G">G. Walter</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Holonyak, N" uniqKey="Holonyak N">N. Holonyak</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Heller, R D" uniqKey="Heller R">R. D. Heller</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Dupuis, R D" uniqKey="Dupuis R">R. D. Dupuis</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0586742</idno><date when="2002-12-09">2002-12-09</date><idno type="stanalyst">PASCAL 02-0586742 AIP</idno><idno type="RBID">Pascal:02-0586742</idno><idno type="wicri:Area/Main/Corpus">00E282</idno><idno type="wicri:Area/Main/Repository">00DC10</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Quantum well lasers</term><term>Resonant tunnelling</term><term>Semiconductor quantum dots</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8535B</term><term>7321F</term><term>7321L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Gallium composé</term><term>Point quantique semiconducteur</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term><term>Effet tunnel résonnant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Data are presented demonstrating the cw 300 K visible spectrum (654 nm) laser operation of a single 7.5 monolayer InP quantum dot (QD) layer coupled by a 20 Å In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P barrier to an auxiliary 70 Å In<sub>0.5</sub>Ga<sub>0.5</sub>P quantum well (QW) that, via resonant tunneling, assists carrier collection, thermalization, and lateral rearrangement in the QDs. The simple stripe-geometry (530 μm×10 μm) InP QD+InGaP QW heterostructure laser, enhanced by the QW and operating on an upper QD state (42% quantum efficiency), is capable of over 10 mW/facet cw 300 K operation in spite of the weak heat sinking of probe operation. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser</s1></fA08><fA11 i1="01" i2="1"><s1>WALTER (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOLONYAK (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>HELLER (R. D.)</s1></fA11><fA11 i1="04" i2="1"><s1>DUPUIS (R. D.)</s1></fA11><fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>4604-4606</s1></fA20><fA21><s1>2002-12-09</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0586742</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Data are presented demonstrating the cw 300 K visible spectrum (654 nm) laser operation of a single 7.5 monolayer InP quantum dot (QD) layer coupled by a 20 Å In<sub>0.5</sub>Al<sub>0.3</sub>Ga<sub>0.2</sub>P barrier to an auxiliary 70 Å In<sub>0.5</sub>Ga<sub>0.5</sub>P quantum well (QW) that, via resonant tunneling, assists carrier collection, thermalization, and lateral rearrangement in the QDs. The simple stripe-geometry (530 μm×10 μm) InP QD+InGaP QW heterostructure laser, enhanced by the QW and operating on an upper QD state (42% quantum efficiency), is capable of over 10 mW/facet cw 300 K operation in spite of the weak heat sinking of probe operation. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C21F</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C21L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7321F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7321L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet tunnel résonnant</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Resonant tunnelling</s0></fC03><fN21><s1>343</s1></fN21><fN47 i1="01" i2="1"><s0>0249M000036</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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