Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
Identifieur interne : 00D972 ( Main/Repository ); précédent : 00D971; suivant : 00D973Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells
Auteurs : RBID : Pascal:03-0211187Descripteurs français
- Pascal (Inist)
English descriptors
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- Band anticrossing model, Band structure, Calculations, Carrier concentration, Experiments, Hamiltonians, Mathematical models, Nitrides, Optical dipole moments, Optical gain, Optical properties, Photocurrent spectroscopy, Photocurrents, Semiconducting gallium arsenide, Semiconducting indium compounds, Semiconductor quantum wells, Theory.
Abstract
The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k========dot;p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.
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Fontaine</name></author><author><name sortKey="Bedel Pereira, E" uniqKey="Bedel Pereira E">E. Bedel Pereira</name></author></titleStmt><publicationStmt><idno type="inist">03-0211187</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0211187 EI</idno><idno type="RBID">Pascal:03-0211187</idno><idno type="wicri:Area/Main/Corpus">00D697</idno><idno type="wicri:Area/Main/Repository">00D972</idno></publicationStmt><seriesStmt><idno type="ISSN">1350-2433</idno><title level="j" type="abbreviated">IEE Proc Optoelectron</title><title level="j" type="main">IEE Proceedings: Optoelectronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band anticrossing model</term><term>Band structure</term><term>Calculations</term><term>Carrier concentration</term><term>Experiments</term><term>Hamiltonians</term><term>Mathematical models</term><term>Nitrides</term><term>Optical dipole moments</term><term>Optical gain</term><term>Optical properties</term><term>Photocurrent spectroscopy</term><term>Photocurrents</term><term>Semiconducting gallium arsenide</term><term>Semiconducting indium compounds</term><term>Semiconductor quantum wells</term><term>Theory</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Théorie</term><term>Nitrure</term><term>Composé semiconducteur indium</term><term>Gallium arséniure semiconducteur</term><term>Structure bande</term><term>Propriété optique</term><term>Calcul</term><term>Modèle mathématique</term><term>Hamiltonien</term><term>Courant photoélectrique</term><term>Concentration porteur charge</term><term>Puits quantique semiconducteur</term><term>Expérience</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k========dot;p Hamiltonian. The calculated interband optical transition energies have been compared to the experimental ones deduced from photocurrent spectroscopy experiments. Optical dipole moments for the interband optical transitions and the dependence of the optical gain spectra on injected carrier density have been computed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1350-2433</s0></fA01><fA02 i1="01"><s0>IPOPE8</s0></fA02><fA03 i2="1"><s0>IEE Proc Optoelectron</s0></fA03><fA05><s2>150</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Band structure and optical gain in InGaAsN/GaAs and InGaAsN/GaAsN quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>MARIE (X.)</s1></fA11><fA11 i1="02" i2="1"><s1>BARRAU (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>AMAND (T.)</s1></fA11><fA11 i1="04" i2="1"><s1>CARRERE (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>ARNOULT (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>FONTAINE (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>BEDEL PEREIRA (E.)</s1></fA11><fA14 i1="01"><s1>LPMC INSA-CNRS Complexe Scientifique de Rangueil</s1><s2>31077 Toulouse Cedex 4</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA20><s1>25-27</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>7573 J</s2></fA43><fA44><s0>A100</s0></fA44><fA45><s0>14 Refs.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0211187</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEE Proceedings: Optoelectronics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The band structure of InGaAsN/GaAs and InGaAsN/GaAsN strained quantum wells has been calculated using the band anticrossing model and an eight-band k========dot;p Hamiltonian. 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