IndiumV3, Main, Repository, bibRecord, 00D943

Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

Identifieur interne : 00D943 ( Main/Repository ); précédent : 00D942; suivant : 00D944

Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

Auteurs : RBID : Pascal:03-0509150

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoluminescence, Dépendance température, Processus excitonique, Recombinaison radiative, Recombinaison électron trou, Spectre excitation, Electron libre, Gallium nitrure, Semiconducteur III-V, Aluminium nitrure, Composé ternaire, Indium nitrure, Couche épitaxique, Composé binaire, Ga N, GaN, Al Ga N, AlGaN, 7855C, 7220J, Ga In N, InGaN.

English descriptors

KwdEn :
- Aluminium nitrides, Binary compounds, Electron-hole recombination, Epitaxial layers, Excitation spectrum, Excitonic process, Experimental study, Free electron, Gallium nitrides, III-V semiconductors, Indium nitrides, Photoluminescence, Radiative recombination, Temperature dependence, Ternary compounds.

Abstract

Photoluminescence (PL) spectra and the temperature dependences of PL efficiency η and of the decay-time τ in Al_xGa_1-xN and In_xGa_1-xN with x below 0.1 are compared with those in GaN epilayers. An excitonic recombination process is evidenced from the temperature dependence of the radiative decay-time derived from η and τ of PL even in these alloys. The decrease in η with the rise of temperature is attributed to a decrease in the radiative recombination probability of excitons or thermally dissociated electrons and holes. The excitation power dependence of PL intensity reveals that free electron-hole recombination becomes efficient at room temperature by virtue of high-density excitation.

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Pascal:03-0509150

Le document en format XML

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<author><name sortKey="Ichimiya, M" uniqKey="Ichimiya M">M. Ichimiya</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Integrated Human Studies, Kyoto University</s1>
<s2>Kyoto 606-8501</s2>
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<country>Japon</country>
<wicri:noRegion>Kyoto 606-8501</wicri:noRegion>
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<author><name sortKey="Hayashi, T" uniqKey="Hayashi T">T. Hayashi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Integrated Human Studies, Kyoto University</s1>
<s2>Kyoto 606-8501</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Kyoto 606-8501</wicri:noRegion>
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</author>
<author><name sortKey="Watanabe, M" uniqKey="Watanabe M">M. Watanabe</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Integrated Human Studies, Kyoto University</s1>
<s2>Kyoto 606-8501</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Kyoto 606-8501</wicri:noRegion>
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<author><name sortKey="Ohata, T" uniqKey="Ohata T">T. Ohata</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Integrated Human Studies, Kyoto University</s1>
<s2>Kyoto 606-8501</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Kyoto 606-8501</wicri:noRegion>
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</author>
<author><name sortKey="Ishibashi, A" uniqKey="Ishibashi A">A. Ishibashi</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.</s1>
<s2>Osaka 570-8501</s2>
<s3>JPN</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Osaka 570-8501</wicri:noRegion>
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<publicationStmt><idno type="inist">03-0509150</idno>
<date when="2003">2003</date>
<idno type="stanalyst">PASCAL 03-0509150 INIST</idno>
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<seriesStmt><idno type="ISSN">0031-8965</idno>
<title level="j" type="abbreviated">Phys. status solidi, A, Appl. res.</title>
<title level="j" type="main">Physica status solidi. A. Applied research</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitrides</term>
<term>Binary compounds</term>
<term>Electron-hole recombination</term>
<term>Epitaxial layers</term>
<term>Excitation spectrum</term>
<term>Excitonic process</term>
<term>Experimental study</term>
<term>Free electron</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Photoluminescence</term>
<term>Radiative recombination</term>
<term>Temperature dependence</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Photoluminescence</term>
<term>Dépendance température</term>
<term>Processus excitonique</term>
<term>Recombinaison radiative</term>
<term>Recombinaison électron trou</term>
<term>Spectre excitation</term>
<term>Electron libre</term>
<term>Gallium nitrure</term>
<term>Semiconducteur III-V</term>
<term>Aluminium nitrure</term>
<term>Composé ternaire</term>
<term>Indium nitrure</term>
<term>Couche épitaxique</term>
<term>Composé binaire</term>
<term>Ga N</term>
<term>GaN</term>
<term>Al Ga N</term>
<term>AlGaN</term>
<term>7855C</term>
<term>7220J</term>
<term>Ga In N</term>
<term>InGaN</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Photoluminescence (PL) spectra and the temperature dependences of PL efficiency η and of the decay-time τ in Al<sub>x</sub>
Ga<sub>1-x</sub>
N and In<sub>x</sub>
Ga<sub>1-x</sub>
N with x below 0.1 are compared with those in GaN epilayers. An excitonic recombination process is evidenced from the temperature dependence of the radiative decay-time derived from η and τ of PL even in these alloys. The decrease in η with the rise of temperature is attributed to a decrease in the radiative recombination probability of excitons or thermally dissociated electrons and holes. The excitation power dependence of PL intensity reveals that free electron-hole recombination becomes efficient at room temperature by virtue of high-density excitation.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Carrier recombination processes in GaN, AlGaN, and InGaN epilayers</s1>
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<fA11 i1="01" i2="1"><s1>ICHIMIYA (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HAYASHI (T.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>WATANABE (M.)</s1>
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<fA11 i1="04" i2="1"><s1>OHATA (T.)</s1>
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<fA11 i1="05" i2="1"><s1>ISHIBASHI (A.)</s1>
</fA11>
<fA14 i1="01"><s1>Faculty of Integrated Human Studies, Kyoto University</s1>
<s2>Kyoto 606-8501</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.</s1>
<s2>Osaka 570-8501</s2>
<s3>JPN</s3>
<sZ>5 aut.</sZ>
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<fA20><s1>347-354</s1>
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<fA45><s0>22 ref.</s0>
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<fA47 i1="01" i2="1"><s0>03-0509150</s0>
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<fA60><s1>P</s1>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Photoluminescence (PL) spectra and the temperature dependences of PL efficiency η and of the decay-time τ in Al<sub>x</sub>
Ga<sub>1-x</sub>
N and In<sub>x</sub>
Ga<sub>1-x</sub>
N with x below 0.1 are compared with those in GaN epilayers. An excitonic recombination process is evidenced from the temperature dependence of the radiative decay-time derived from η and τ of PL even in these alloys. The decrease in η with the rise of temperature is attributed to a decrease in the radiative recombination probability of excitons or thermally dissociated electrons and holes. The excitation power dependence of PL intensity reveals that free electron-hole recombination becomes efficient at room temperature by virtue of high-density excitation.</s0>
</fC01>
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<s5>02</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>03</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Processus excitonique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Excitonic process</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Proceso excitónico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Recombinaison radiative</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Radiative recombination</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Recombinación radiativa</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Recombinaison électron trou</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electron-hole recombination</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Spectre excitation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Excitation spectrum</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Espectro excitación</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Electron libre</s0>
<s5>09</s5>
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<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Electrón libre</s0>
<s5>09</s5>
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<fC03 i1="09" i2="3" l="FRE"><s0>Gallium nitrure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Gallium nitrides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Aluminium nitrure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Aluminium nitrides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Indium nitrure</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Indium nitrides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Couche épitaxique</s0>
<s5>20</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Epitaxial layers</s0>
<s5>20</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>21</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>21</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Al Ga N</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>AlGaN</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7855C</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>7220J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Ga In N</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>335</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
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</inist>
</record>

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Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

Carrier recombination processes in GaN, AlGaN, and InGaN epilayers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri