IndiumV3, Main, Repository, bibRecord, 00CF21

Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al0.25As heterostructure

Identifieur interne : 00CF21 ( Main/Repository ); précédent : 00CF20; suivant : 00CF22

Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al0.25As heterostructure

Auteurs : RBID : Pascal:03-0312076

Descripteurs français

Pascal (Inist)
- Gaz électron, Etude expérimentale, Interface, Décomposition niveau énergie, Structure lamellaire, Hétérostructure, Indium arséniure, Gallium arséniure, Aluminium arséniure, Composé ternaire, Semiconducteur III-V, InGaAs, As Ga In, InAlAs, Al As In, 7225D, 7170E.

English descriptors

KwdEn :
- Aluminium arsenides, Electron gas, Energy-level splitting, Experimental study, Gallium arsenides, Heterostructures, III-V semiconductors, Indium arsenides, Interfaces, Lamellar structure, Ternary compounds.

Abstract

In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett. 77, 135 (1996)) that 0.7(2e²/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In_0.75Ga_0.25As/In_0.75Al_0.25As heterojunctions grown on GaAs substrates and obtained the value of ≤10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e²/h conductance steps in low electron concentration side-gate point contact.

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Pascal:03-0312076

Le document en format XML

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/h conductance steps in a side-gate point contact on In<sub>0.75</sub>
Ga<sub>0.25</sub>
As/In<sub>0.75</sub>
Al<sub>0.25</sub>
As heterostructure</title>
<author><name sortKey="Kita, T" uniqKey="Kita T">T. Kita</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Nano Materials and Technology, JAIST, 1-1 Asahidai</s1>
<s2>Tatsunokuchi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tatsunokuchi, Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gozu, S" uniqKey="Gozu S">S. Gozu</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>CREST Japan Science and Technology</s1>
<s2>Kawaguchi, Saitama 332-0012</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>CREST Japan Science and Technology</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sato, Y" uniqKey="Sato Y">Y. Sato</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Nano Materials and Technology, JAIST, 1-1 Asahidai</s1>
<s2>Tatsunokuchi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tatsunokuchi, Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yamada, S" uniqKey="Yamada S">S. Yamada</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Nano Materials and Technology, JAIST, 1-1 Asahidai</s1>
<s2>Tatsunokuchi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>Japon</country>
<wicri:noRegion>Tatsunokuchi, Ishikawa 923-1292</wicri:noRegion>
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<term>Heterostructures</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
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<term>Lamellar structure</term>
<term>Ternary compounds</term>
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<term>Structure lamellaire</term>
<term>Hétérostructure</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Aluminium arséniure</term>
<term>Composé ternaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAs</term>
<term>As Ga In</term>
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<front><div type="abstract" xml:lang="en">In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett. 77, 135 (1996)) that 0.7(2e<sup>2</sup>
/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In<sub>0.75</sub>
Ga<sub>0.25</sub>
As/In<sub>0.75</sub>
Al<sub>0.25</sub>
As heterojunctions grown on GaAs substrates and obtained the value of ≤10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e<sup>2</sup>
/h conductance steps in low electron concentration side-gate point contact.</div>
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As/In<sub>0.75</sub>
Al<sub>0.25</sub>
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<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
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<fA14 i1="02"><s1>CREST Japan Science and Technology</s1>
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Ga<sub>0.25</sub>
As/In<sub>0.75</sub>
Al<sub>0.25</sub>
As heterojunctions grown on GaAs substrates and obtained the value of ≤10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e<sup>2</sup>
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Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al0.25As heterostructure

Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al0.25As heterostructure

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri