Effects of N2 Plasma Treatment of the Al Bottom Cathode on the Characteristics of Top-Emission-Inverted Organic-Light-Emitting Diodes
Identifieur interne : 00C386 ( Main/Repository ); précédent : 00C385; suivant : 00C387Effects of N2 Plasma Treatment of the Al Bottom Cathode on the Characteristics of Top-Emission-Inverted Organic-Light-Emitting Diodes
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Abstract
Effects of N2 plasma treatment of the Al bottom cathode on the characteristics of top-emission-inverted organic-light-emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-8-hydroxyquinoline aluminum (Alq3)-emitting layer, an N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD) hole transport layer, and an indium-tin-oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to N2 plasma treatment before deposition of the Alq3 layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of AlNx between the Alq3-emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Al bottom cathode subjected to N2 plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode. © 2003 The Japan Society of Applied Physics
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J. Appl. Phys., Part II</title><title level="j" type="main">Japanese Journal of Applied Physics Part II : Letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Cathodes</term><term>Experimental study</term><term>Light emitting diodes</term><term>Materials properties</term><term>Organic compounds</term><term>Plasma applications</term><term>Thin film devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560J</term><term>8140T</term><term>5277</term><term>Etude expérimentale</term><term>Diode électroluminescente</term><term>Dispositif couche mince</term><term>Composé organique</term><term>Application plasma</term><term>Propriété matériau</term><term>Cathode</term><term>Aluminium</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Effects of N2 plasma treatment of the Al bottom cathode on the characteristics of top-emission-inverted organic-light-emitting diodes (TEIOLEDs) were studied. TEIOLEDs were fabricated by depositing an Al bottom cathode, a tris-8-hydroxyquinoline aluminum (Alq3)-emitting layer, an N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD) hole transport layer, and an indium-tin-oxide (ITO) top anode sequentially. The Al bottom cathode layer was subjected to N2 plasma treatment before deposition of the Alq3 layer. X-ray photoelectron spectroscopy suggested that the existence of and the amount of AlNx between the Alq3-emitting layer and the Al bottom cathode significantly affect the characteristics of TEIOLEDs. The maximum external quantum efficiency of the TEIOLED with an Al bottom cathode subjected to N2 plasma treatment for 30 s was about twice as high as that of the TEIOLED with an untreated Al bottom cathode. © 2003 The Japan Society of Applied Physics</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPLD8</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. 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