Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films
Identifieur interne : 00C337 ( Main/Repository ); précédent : 00C336; suivant : 00C338Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films
Auteurs : RBID : Pascal:03-0240747Descripteurs français
- Pascal (Inist)
- 8115G, 7361E, 8105E, 6172V, 6855L, Etude expérimentale, Aluminium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Couche mince semiconductrice, Revêtement MOCVD, Croissance semiconducteur, Résistivité électrique, Densité porteur charge, Mobilité électron, Indium, Silicium, Dopage semiconducteur.
English descriptors
- KwdEn :
Abstract
Highly conductive Al0.65Ga0.35N films were fabricated using indium-silicon codoping and a low growth temperature of 920°C in the metalorganic chemical vapor deposition process. The Al0.65Ga0.35N:(Si,In) layers exhibited an n-type carrier density as high as 2.5×1019 cm-3 with an electron mobility of 22 cm2/Vs, corresponding to a resistivity of 1.1×10-4 Ωcm. Significantly higher resistivity values were measured for AlxGa1-xN:Si doped films with x≥0.49 deposited at 1150°C without indium, e.g., the Al0.62Ga0.38N:Si samples exhibited a maximum carrier concentration of 1.3×1017 cm-3 and a resistivity of 6.2×10-2 Ωcm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films. © 2003 American Institute of Physics.
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Ga<sub>0.35</sub>
N films</title>
<author><name sortKey="Cantu, P" uniqKey="Cantu P">P. Cantu</name>
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<author><name sortKey="Keller, S" uniqKey="Keller S">S. Keller</name>
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<author><name sortKey="Mishra, U K" uniqKey="Mishra U">U. K. Mishra</name>
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<author><name sortKey="Denbaars, S P" uniqKey="Denbaars S">S. P. Denbaars</name>
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<term>Experimental study</term>
<term>Gallium compounds</term>
<term>III-V semiconductors</term>
<term>Indium</term>
<term>MOCVD coatings</term>
<term>Semiconductor doping</term>
<term>Semiconductor growth</term>
<term>Semiconductor thin films</term>
<term>Silicon</term>
<term>Wide band gap semiconductors</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>8115G</term>
<term>7361E</term>
<term>8105E</term>
<term>6172V</term>
<term>6855L</term>
<term>Etude expérimentale</term>
<term>Aluminium composé</term>
<term>Gallium composé</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur bande interdite large</term>
<term>Couche mince semiconductrice</term>
<term>Revêtement MOCVD</term>
<term>Croissance semiconducteur</term>
<term>Résistivité électrique</term>
<term>Densité porteur charge</term>
<term>Mobilité électron</term>
<term>Indium</term>
<term>Silicium</term>
<term>Dopage semiconducteur</term>
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<front><div type="abstract" xml:lang="en">Highly conductive Al<sub>0.65</sub>
Ga<sub>0.35</sub>
N films were fabricated using indium-silicon codoping and a low growth temperature of 920°C in the metalorganic chemical vapor deposition process. The Al<sub>0.65</sub>
Ga<sub>0.35</sub>
N:(Si,In) layers exhibited an n-type carrier density as high as 2.5×10<sup>19</sup>
cm<sup>-3</sup>
with an electron mobility of 22 cm<sup>2</sup>
/Vs, corresponding to a resistivity of 1.1×10<sup>-4</sup>
Ωcm. Significantly higher resistivity values were measured for Al<sub>x</sub>
Ga<sub>1-x</sub>
N:Si doped films with x≥0.49 deposited at 1150°C without indium, e.g., the Al<sub>0.62</sub>
Ga<sub>0.38</sub>
N:Si samples exhibited a maximum carrier concentration of 1.3×10<sup>17</sup>
cm<sup>-3</sup>
and a resistivity of 6.2×10<sup>-2</sup>
Ωcm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films. © 2003 American Institute of Physics.</div>
</front>
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Ga<sub>0.35</sub>
N films</s1>
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<fA14 i1="01"><s1>Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106</s1>
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<fC01 i1="01" l="ENG"><s0>Highly conductive Al<sub>0.65</sub>
Ga<sub>0.35</sub>
N films were fabricated using indium-silicon codoping and a low growth temperature of 920°C in the metalorganic chemical vapor deposition process. The Al<sub>0.65</sub>
Ga<sub>0.35</sub>
N:(Si,In) layers exhibited an n-type carrier density as high as 2.5×10<sup>19</sup>
cm<sup>-3</sup>
with an electron mobility of 22 cm<sup>2</sup>
/Vs, corresponding to a resistivity of 1.1×10<sup>-4</sup>
Ωcm. Significantly higher resistivity values were measured for Al<sub>x</sub>
Ga<sub>1-x</sub>
N:Si doped films with x≥0.49 deposited at 1150°C without indium, e.g., the Al<sub>0.62</sub>
Ga<sub>0.38</sub>
N:Si samples exhibited a maximum carrier concentration of 1.3×10<sup>17</sup>
cm<sup>-3</sup>
and a resistivity of 6.2×10<sup>-2</sup>
Ωcm. The electrical properties of the films are discussed in relation to the chemical concentrations of silicon and residual impurities in the films. © 2003 American Institute of Physics.</s0>
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<fC03 i1="07" i2="3" l="FRE"><s0>Aluminium composé</s0>
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<fC03 i1="15" i2="3" l="FRE"><s0>Densité porteur charge</s0>
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<s2>NC</s2>
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