Realization of one-chip-multiple-wavelength laser diodes with II-VI/III-V compound semiconductors
Identifieur interne : 00C291 ( Main/Repository ); précédent : 00C290; suivant : 00C292Realization of one-chip-multiple-wavelength laser diodes with II-VI/III-V compound semiconductors
Auteurs : RBID : Pascal:03-0256220Descripteurs français
- Pascal (Inist)
- 4260B, 7867D, 7866H, 7866F, 4255P, 8535B, 8115H, 8115G, 8115K, Etude expérimentale, Zinc composé, Cadmium composé, Magnésium composé, Béryllium composé, Semiconducteur II-VI, Indium composé, Gallium composé, Aluminium composé, Semiconducteur III-V, Laser puits quantique, Diode électroluminescente, Epitaxie jet moléculaire, Revêtement MOCVD, Epitaxie phase vapeur, Croissance semiconducteur.
English descriptors
- KwdEn :
- Aluminium compounds, Beryllium compounds, Cadmium compounds, Experimental study, Gallium compounds, II-VI semiconductors, III-V semiconductors, Indium compounds, Light emitting diodes, MOCVD coatings, Magnesium compounds, Molecular beam epitaxy, Quantum well lasers, Semiconductor growth, VPE, Zinc compounds.
Abstract
A laser diode which includes II-VI device structure directly grown on III-V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II-VI/III-V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II-VI and III-VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm2, respectively. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures, which will stimulate the investigation of multifunctional optical devices. © 2003 American Institute of Physics.
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Song</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Korea Maritime University, Department of Applied Physics, Pusan 606791, Korea</s1></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Korea Maritime University, Department of Applied Physics, Pusan 606791</wicri:regionArea><wicri:noRegion>Pusan 606791</wicri:noRegion></affiliation></author><author><name sortKey="Cho, M W" uniqKey="Cho M">M. W. Cho</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Oh, D C" uniqKey="Oh D">D. C. Oh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Makino, H" uniqKey="Makino H">H. Makino</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Hanada, T" uniqKey="Hanada T">T. Hanada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Yao, T" uniqKey="Yao T">T. Yao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Zhang, B P" uniqKey="Zhang B">B. P. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845</wicri:regionArea><wicri:noRegion>Sendai 980-0845</wicri:noRegion></affiliation></author><author><name sortKey="Segawa, Y" uniqKey="Segawa Y">Y. Segawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845</wicri:regionArea><wicri:noRegion>Sendai 980-0845</wicri:noRegion></affiliation></author><author><name sortKey="Chang, J H" uniqKey="Chang J">J. H. Chang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Song, H S" uniqKey="Song H">H. S. Song</name></author><author><name sortKey="Cho, I S" uniqKey="Cho I">I. S. Cho</name></author><author><name sortKey="Kim, H W" uniqKey="Kim H">H. W. Kim</name></author><author><name sortKey="Jung, J J" uniqKey="Jung J">J. J. Jung</name></author></titleStmt><publicationStmt><idno type="inist">03-0256220</idno><date when="2003-06-09">2003-06-09</date><idno type="stanalyst">PASCAL 03-0256220 AIP</idno><idno type="RBID">Pascal:03-0256220</idno><idno type="wicri:Area/Main/Corpus">00D430</idno><idno type="wicri:Area/Main/Repository">00C291</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Beryllium compounds</term><term>Cadmium compounds</term><term>Experimental study</term><term>Gallium compounds</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light emitting diodes</term><term>MOCVD coatings</term><term>Magnesium compounds</term><term>Molecular beam epitaxy</term><term>Quantum well lasers</term><term>Semiconductor growth</term><term>VPE</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4260B</term><term>7867D</term><term>7866H</term><term>7866F</term><term>4255P</term><term>8535B</term><term>8115H</term><term>8115G</term><term>8115K</term><term>Etude expérimentale</term><term>Zinc composé</term><term>Cadmium composé</term><term>Magnésium composé</term><term>Béryllium composé</term><term>Semiconducteur II-VI</term><term>Indium composé</term><term>Gallium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Laser puits quantique</term><term>Diode électroluminescente</term><term>Epitaxie jet moléculaire</term><term>Revêtement MOCVD</term><term>Epitaxie phase vapeur</term><term>Croissance semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A laser diode which includes II-VI device structure directly grown on III-V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II-VI/III-V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II-VI and III-VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm2, respectively. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures, which will stimulate the investigation of multifunctional optical devices. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Realization of one-chip-multiple-wavelength laser diodes with II-VI/III-V compound semiconductors</s1></fA08><fA11 i1="01" i2="1"><s1>SONG (J. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHO (M. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>OH (D. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>MAKINO (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>HANADA (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>YAO (T.)</s1></fA11><fA11 i1="07" i2="1"><s1>ZHANG (B. P.)</s1></fA11><fA11 i1="08" i2="1"><s1>SEGAWA (Y.)</s1></fA11><fA11 i1="09" i2="1"><s1>CHANG (J. H.)</s1></fA11><fA11 i1="10" i2="1"><s1>SONG (H. S.)</s1></fA11><fA11 i1="11" i2="1"><s1>CHO (I. S.)</s1></fA11><fA11 i1="12" i2="1"><s1>KIM (H. W.)</s1></fA11><fA11 i1="13" i2="1"><s1>JUNG (J. J.)</s1></fA11><fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Korea Maritime University, Department of Applied Physics, Pusan 606791, Korea</s1></fA14><fA14 i1="04"><s1>LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul, 137-724, Korea</s1><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="05"><s1>LG Innotek Co., Ltd. 978-1, Jangduk-dong, Gwangsan-gu, Gwang Ju-City, 506-731, Korea</s1><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA20><s1>4095-4097</s1></fA20><fA21><s1>2003-06-09</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0256220</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>A laser diode which includes II-VI device structure directly grown on III-V device structure is proposed. This idea makes possible one-chip-multiple-wavelength operation in the visible wavelength region by the vertical integration of individual light emitters, which is demonstrated by a ZnCdSe/ZnSe/ZnMgBeSe quantum-well structure for a blue-green light emitter grown by molecular beam epitaxy directly on a metalorganic chemical vapor deposition grown InGaP/InGaAlP device wafer for a red light emitting device. The feasibility of the II-VI/III-V complex light emitter is demonstrated by optical-pumping experiments. Optically pumped lasing at 504 and 664 nm is achieved from II-VI and III-VI laser structures on one chip simultaneously at room temperature with a threshold power of 115 and 84 kW/cm2, respectively. The present results clearly show the feasibility of epitaxial integration of II-VI and III-V laser structures, which will stimulate the investigation of multifunctional optical devices. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B60B</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66H</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="05" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="06" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="07" i2="3"><s0>001B80A15H</s0></fC02><fC02 i1="08" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="09" i2="3"><s0>001B80A15K</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4260B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>8115H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>8115K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Zinc composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Zinc compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Cadmium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Cadmium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Magnésium composé</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Magnesium compounds</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Béryllium composé</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Beryllium compounds</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>II-VI semiconductors</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Diode électroluminescente</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Light emitting diodes</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Revêtement MOCVD</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>MOCVD coatings</s0></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0></fC03><fC03 i1="24" i2="3" l="ENG"><s0>VPE</s0></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="25" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fN21><s1>160</s1></fN21><fN47 i1="01" i2="1"><s0>0322M000202</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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