Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
Identifieur interne : 00C166 ( Main/Repository ); précédent : 00C165; suivant : 00C167Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements
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Abstract
The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy Ps of 13fJ/μm2 and an absorption recovery time τr of 55 ps were obtained from transmission bleaching and pump/probe measurements for a waveguide sample with ten-layer-stacked QDs. An absorption saturation intensity Is of 2.5×104W/cm2, calculated from Ps and τr, was found. The saturation pulse energy is up to an order of magnitude smaller than, or at least comparable with, the reported values for excitons in quantum wells of III-V compound semiconductors. The dipole length, as calculated from the absorption cross section, is of the same order as the lattice constant of the InAs QDs. The results are expected to experimentally verify that QDs show a delta-function-like density of states. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements</title><author><name sortKey="Nakamura, H" uniqKey="Nakamura H">H. Nakamura</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba</wicri:regionArea><wicri:noRegion>Tsukuba</wicri:noRegion></affiliation></author><author><name sortKey="Nishikawa, S" uniqKey="Nishikawa S">S. Nishikawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba</wicri:regionArea><wicri:noRegion>Tsukuba</wicri:noRegion></affiliation></author><author><name sortKey="Kohmoto, S" uniqKey="Kohmoto S">S. Kohmoto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba</wicri:regionArea><wicri:noRegion>Tsukuba</wicri:noRegion></affiliation></author><author><name sortKey="Kanamoto, K" uniqKey="Kanamoto K">K. Kanamoto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba</wicri:regionArea><wicri:noRegion>Tsukuba</wicri:noRegion></affiliation></author><author><name sortKey="Asakawa, K" uniqKey="Asakawa K">K. Asakawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba</wicri:regionArea><wicri:noRegion>Tsukuba</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0315299</idno><date when="2003-07-15">2003-07-15</date><idno type="stanalyst">PASCAL 03-0315299 AIP</idno><idno type="RBID">Pascal:03-0315299</idno><idno type="wicri:Area/Main/Corpus">00D020</idno><idno type="wicri:Area/Main/Repository">00C166</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Optical saturable absorption</term><term>Self-assembly</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4250G</term><term>7867H</term><term>7321L</term><term>4250M</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Absorption optique saturable</term><term>Autoassemblage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy P<sub>s</sub> of 13fJ/μm<sup>2</sup> and an absorption recovery time τ<sub>r</sub> of 55 ps were obtained from transmission bleaching and pump/probe measurements for a waveguide sample with ten-layer-stacked QDs. An absorption saturation intensity I<sub>s</sub> of 2.5×10<sup>4</sup>W/cm<sup>2</sup>, calculated from P<sub>s</sub> and τ<sub>r</sub>, was found. The saturation pulse energy is up to an order of magnitude smaller than, or at least comparable with, the reported values for excitons in quantum wells of III-V compound semiconductors. The dipole length, as calculated from the absorption cross section, is of the same order as the lattice constant of the InAs QDs. The results are expected to experimentally verify that QDs show a delta-function-like density of states. © 2003 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical nonlinear properties of InAs quantum dots by means of transient absorption measurements</s1></fA08><fA11 i1="01" i2="1"><s1>NAKAMURA (H.)</s1></fA11><fA11 i1="02" i2="1"><s1>NISHIKAWA (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOHMOTO (S.)</s1></fA11><fA11 i1="04" i2="1"><s1>KANAMOTO (K.)</s1></fA11><fA11 i1="05" i2="1"><s1>ASAKAWA (K.)</s1></fA11><fA14 i1="01"><s1>The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1184-1189</s1></fA20><fA21><s1>2003-07-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0315299</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical nonlinear properties of self-assembled InAs/GaAs quantum dots (QDs) were experimentally verified by means of transient absorption measurements. A saturation pulse energy P<sub>s</sub> of 13fJ/μm<sup>2</sup> and an absorption recovery time τ<sub>r</sub> of 55 ps were obtained from transmission bleaching and pump/probe measurements for a waveguide sample with ten-layer-stacked QDs. An absorption saturation intensity I<sub>s</sub> of 2.5×10<sup>4</sup>W/cm<sup>2</sup>, calculated from P<sub>s</sub> and τ<sub>r</sub>, was found. The saturation pulse energy is up to an order of magnitude smaller than, or at least comparable with, the reported values for excitons in quantum wells of III-V compound semiconductors. The dipole length, as calculated from the absorption cross section, is of the same order as the lattice constant of the InAs QDs. 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