Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures
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Abstract
The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In0.15Ga0.85As layer was 1.26 μm with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In0.15Ga0.85As layer below the InAs QD layer with a 6 nm In0.15Ga0.85As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In0.15Ga0.85As overgrowth layer only. By covering the InAs QDs on a 1 nm In0.15Ga0.85As layer with an 8 nm InxGa1-xAs layer having graded In composition, the emission peak position was 1.32 μm with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In0.15Ga0.85As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures</title><author><name sortKey="Kim, Jin Soo" uniqKey="Kim J">Jin Soo Kim</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Jin Hong" uniqKey="Lee J">Jin Hong Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Hong, Sung Ui" uniqKey="Hong S">Sung Ui Hong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Han, Won Seok" uniqKey="Han W">Won Seok Han</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Kwack, Ho Sang" uniqKey="Kwack H">Ho-Sang Kwack</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Chul Wook" uniqKey="Lee C">Chul Wook Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author><author><name sortKey="Oh, Dae Kon" uniqKey="Oh D">Dae Kon Oh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0465435</idno><date when="2003-11-15">2003-11-15</date><idno type="stanalyst">PASCAL 03-0465435 AIP</idno><idno type="RBID">Pascal:03-0465435</idno><idno type="wicri:Area/Main/Corpus">00C719</idno><idno type="wicri:Area/Main/Repository">00BE16</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Self-assembly</term><term>Semiconductor quantum dots</term><term>Transmission electron microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6865H</term><term>7867H</term><term>8107T</term><term>8105E</term><term>7855C</term><term>6837L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Microscopie électronique transmission</term><term>Photoluminescence</term><term>Autoassemblage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer was 1.26 μm with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer below the InAs QD layer with a 6 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In<sub>0.15</sub>Ga<sub>0.85</sub>As overgrowth layer only. By covering the InAs QDs on a 1 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer with an 8 nm In<sub>x</sub>Ga<sub>1-x</sub>As layer having graded In composition, the emission peak position was 1.32 μm with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In<sub>0.15</sub>Ga<sub>0.85</sub>As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures</s1></fA08><fA11 i1="01" i2="1"><s1>KIM (Jin Soo)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (Jin Hong)</s1></fA11><fA11 i1="03" i2="1"><s1>HONG (Sung Ui)</s1></fA11><fA11 i1="04" i2="1"><s1>HAN (Won Seok)</s1></fA11><fA11 i1="05" i2="1"><s1>KWACK (Ho-Sang)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (Chul Wook)</s1></fA11><fA11 i1="07" i2="1"><s1>OH (Dae Kon)</s1></fA11><fA14 i1="01"><s1>Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>6603-6606</s1></fA20><fA21><s1>2003-11-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0465435</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The structural and optical properties of self-assembled InAs quantum dots (QDs) with various InGaAs structures were investigated by transmission electron microscopy (TEM) and photoluminescence (PL). The emission peak position of InAs QDs covered by a 6 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer was 1.26 μm with PL linewidth of 31 meV, which is narrower than that of QDs in a GaAs matrix. By inserting a 1 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer below the InAs QD layer with a 6 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As overgrowth layer, the emission peak position was redshifted with larger energy-level spacing between the ground states and the first excited states compared to that of QDs with an In<sub>0.15</sub>Ga<sub>0.85</sub>As overgrowth layer only. By covering the InAs QDs on a 1 nm In<sub>0.15</sub>Ga<sub>0.85</sub>As layer with an 8 nm In<sub>x</sub>Ga<sub>1-x</sub>As layer having graded In composition, the emission peak position was 1.32 μm with relatively larger energy-level spacing and narrower PL linewidth compared to QDs covered by an In<sub>0.15</sub>Ga<sub>0.85</sub>As layer. The longer emission wavelength with relatively larger energy-level spacing was largely related to the change in the QD shape and size, especially the aspect ratio (height/width), which was confirmed by cross-sectional TEM images. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67H</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05Y</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="05" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="06" i2="3"><s0>001B60A16B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6865H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8107T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>6837L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Transmission electron microscopy</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Autoassemblage</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Self-assembly</s0></fC03><fN21><s1>315</s1></fN21><fN47 i1="01" i2="1"><s0>0344M000158</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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