Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures
Identifieur interne : 00BD61 ( Main/Repository ); précédent : 00BD60; suivant : 00BD62Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures
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Abstract
We have theoretically investigated nonlinear free-carrier absorption of terahertz (THz) radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long-standing experimental result on the nonlinear absorption in the THz regime.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures</title><author><name sortKey="Cao, J C" uniqKey="Cao J">J. C. Cao</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050</wicri:regionArea><wicri:noRegion>Shanghai 200050</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0531560</idno><date when="2003-12-05">2003-12-05</date><idno type="stanalyst">PASCAL 03-0531560 AIP</idno><idno type="RBID">Pascal:03-0531560</idno><idno type="wicri:Area/Main/Corpus">00C435</idno><idno type="wicri:Area/Main/Repository">00BD61</idno></publicationStmt><seriesStmt><idno type="ISSN">0031-9007</idno><title level="j" type="abbreviated">Phys. rev. lett.</title><title level="j" type="main">Physical review letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Antimony compounds</term><term>Arsenic compounds</term><term>Electromagnetic wave absorption</term><term>Impact ionization</term><term>Indium compounds</term><term>Multi-photon processes</term><term>Semiconductor heterojunctions</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820C</term><term>7210B</term><term>7350F</term><term>7350G</term><term>Etude théorique</term><term>Hétérojonction semiconducteur</term><term>Indium composé</term><term>Aluminium composé</term><term>Arsenic composé</term><term>Antimoine composé</term><term>Absorption onde électromagnétique</term><term>Ionisation choc</term><term>Processus n photons</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have theoretically investigated nonlinear free-carrier absorption of terahertz (THz) radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long-standing experimental result on the nonlinear absorption in the THz regime.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0031-9007</s0></fA01><fA02 i1="01"><s0>PRLTAO</s0></fA02><fA03 i2="1"><s0>Phys. rev. lett.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>CAO (J. C.)</s1></fA11><fA14 i1="01"><s1>State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China</s1><sZ>1 aut.</sZ></fA14><fA20><s2>237401-237401-4</s2></fA20><fA21><s1>2003-12-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>8895</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0531560</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have theoretically investigated nonlinear free-carrier absorption of terahertz (THz) radiation in InAs/AlSb heterojunctions. 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