Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4
Identifieur interne : 00BD31 ( Main/Repository ); précédent : 00BD30; suivant : 00BD32Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn2Te4
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Abstract
Optical absorption and photoluminescence (PL) spectra have been measured on the defect-chalcopyrite-type semiconductor ZnIn2Te4 in the 1.1-1.6 eV photon-energy range at temperatures between 11 and 300 K. The temperature dependence of the direct-gap energy of ZnIn2Te4 has been determined from the optical absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band at ∼1.4 eV, which is attributed to donor-acceptor pair recombination between quasicontinuously distributed donor states and acceptor levels. At temperatures above 90 K, the band-to-band emission begins to appear at the high-energy tail of the donor-acceptor pair recombination. A double-exponential fit analysis of the PL spectra suggests an acceptor level of 64 meV and an unidentified shallow level of 9 meV. An energy-band scheme has been proposed for the explanation of PL emission in the defect-chalcopyrite-type semiconductors.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn<sub>2</sub>Te<sub>4</sub></title><author><name sortKey="Ozaki, Shunji" uniqKey="Ozaki S">Shunji Ozaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515</wicri:regionArea><wicri:noRegion>Gunma 376-8515</wicri:noRegion></affiliation></author><author><name sortKey="Boku, Sei Ichi" uniqKey="Boku S">Sei-Ichi Boku</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515</wicri:regionArea><wicri:noRegion>Gunma 376-8515</wicri:noRegion></affiliation></author><author><name sortKey="Adachi, Sadao" uniqKey="Adachi S">Sadao Adachi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515</wicri:regionArea><wicri:noRegion>Gunma 376-8515</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0046341</idno><date when="2003-12-15">2003-12-15</date><idno type="stanalyst">PASCAL 04-0046341 AIP</idno><idno type="RBID">Pascal:04-0046341</idno><idno type="wicri:Area/Main/Corpus">00C110</idno><idno type="wicri:Area/Main/Repository">00BD31</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficients</term><term>Defect absorption spectra</term><term>Electron-hole recombination</term><term>Energy gap</term><term>Experimental study</term><term>Indium compounds</term><term>Photoluminescence</term><term>Ternary semiconductors</term><term>Visible spectra</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820C</term><term>7840F</term><term>7855H</term><term>Etude expérimentale</term><term>Semiconducteur ternaire</term><term>Zinc composé</term><term>Indium composé</term><term>Photoluminescence</term><term>Spectre visible</term><term>Spectre absorption défaut</term><term>Bande interdite</term><term>Recombinaison électron trou</term><term>Coefficient absorption</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Optical absorption and photoluminescence (PL) spectra have been measured on the defect-chalcopyrite-type semiconductor ZnIn<sub>2</sub>Te<sub>4</sub> in the 1.1-1.6 eV photon-energy range at temperatures between 11 and 300 K. The temperature dependence of the direct-gap energy of ZnIn<sub>2</sub>Te<sub>4</sub> has been determined from the optical absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band at ∼1.4 eV, which is attributed to donor-acceptor pair recombination between quasicontinuously distributed donor states and acceptor levels. At temperatures above 90 K, the band-to-band emission begins to appear at the high-energy tail of the donor-acceptor pair recombination. A double-exponential fit analysis of the PL spectra suggests an acceptor level of 64 meV and an unidentified shallow level of 9 meV. An energy-band scheme has been proposed for the explanation of PL emission in the defect-chalcopyrite-type semiconductors.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>68</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical absorption and photoluminescence in the defect-chalcopyrite-type semiconductor ZnIn<sub>2</sub>Te<sub>4</sub></s1></fA08><fA11 i1="01" i2="1"><s1>OZAKI (Shunji)</s1></fA11><fA11 i1="02" i2="1"><s1>BOKU (Sei-ichi)</s1></fA11><fA11 i1="03" i2="1"><s1>ADACHI (Sadao)</s1></fA11><fA14 i1="01"><s1>Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s2>235201-235201-7</s2></fA20><fA21><s1>2003-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0046341</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Optical absorption and photoluminescence (PL) spectra have been measured on the defect-chalcopyrite-type semiconductor ZnIn<sub>2</sub>Te<sub>4</sub> in the 1.1-1.6 eV photon-energy range at temperatures between 11 and 300 K. The temperature dependence of the direct-gap energy of ZnIn<sub>2</sub>Te<sub>4</sub> has been determined from the optical absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band at ∼1.4 eV, which is attributed to donor-acceptor pair recombination between quasicontinuously distributed donor states and acceptor levels. At temperatures above 90 K, the band-to-band emission begins to appear at the high-energy tail of the donor-acceptor pair recombination. A double-exponential fit analysis of the PL spectra suggests an acceptor level of 64 meV and an unidentified shallow level of 9 meV. 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