IndiumV3, Main, Repository, bibRecord, 00B271

Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Identifieur interne : 00B271 ( Main/Repository ); précédent : 00B270; suivant : 00B272

Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Auteurs : RBID : Pascal:05-0149310

Descripteurs français

Pascal (Inist)
- Déplacement vers le bleu, Déplacement raie, Composé ternaire, Gallium arséniure, Indium arséniure, Composé quaternaire, Gallium phosphure, Indium phosphure, Semiconducteur III-V, Puits quantique, Diffusion mutuelle, Hétérostructure, Croissance film, Méthode MOVPE, Elargissement raie, Argon, Traitement par plasma, As Ga In, InGaAs, As Ga In P, InGaAsP, 6835F, 7855, 7867D.

English descriptors

KwdEn :
- Argon, Blue shift, Film growth, Gallium arsenides, Gallium phosphides, Heterostructures, III-V semiconductors, Indium arsenides, Indium phosphides, Interdiffusion, Line broadening, MOVPE method, Plasma assisted processing, Quantum wells, Quaternary compounds, Spectral line shift, Ternary compounds.

Abstract

In this paper, we present an attractive approach of argon plasma-induced quantum well intermixing for InP based heterostructures. The lattice-matched five quantum wells of InGaAs/InGaAsP grown by MOVPE exhibited a large blue shift with minimal line width broadening after plasma exposure and annealing. This large shift occurs due to interdiffusion of high density of point defects created by high ion current density in the inductively coupled plasma system. The interdiffusion creates a high degree of intermixing, with coherent diffusion of the group III and group V elements on their own sublattices. Intermixing results in no material quality degradation that highlights the plasma quantum well intermixing technique is well suited for photonic integration circuit fabrication.

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Pascal:05-0149310

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures</title>
<author><name sortKey="Arokiaraj, J" uniqKey="Arokiaraj J">J. Arokiaraj</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic and Electrical Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Singapore 639798</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Djie, H S" uniqKey="Djie H">H. S. Djie</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic and Electrical Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Singapore 639798</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mei, T" uniqKey="Mei T">T. Mei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>School of Electronic and Electrical Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Singapour</country>
<wicri:noRegion>Singapore 639798</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">05-0149310</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 05-0149310 INIST</idno>
<idno type="RBID">Pascal:05-0149310</idno>
<idno type="wicri:Area/Main/Corpus">00A566</idno>
<idno type="wicri:Area/Main/Repository">00B271</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0169-4332</idno>
<title level="j" type="abbreviated">Appl. surf. sci.</title>
<title level="j" type="main">Applied surface science</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Argon</term>
<term>Blue shift</term>
<term>Film growth</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Heterostructures</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Interdiffusion</term>
<term>Line broadening</term>
<term>MOVPE method</term>
<term>Plasma assisted processing</term>
<term>Quantum wells</term>
<term>Quaternary compounds</term>
<term>Spectral line shift</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Déplacement vers le bleu</term>
<term>Déplacement raie</term>
<term>Composé ternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Composé quaternaire</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Semiconducteur III-V</term>
<term>Puits quantique</term>
<term>Diffusion mutuelle</term>
<term>Hétérostructure</term>
<term>Croissance film</term>
<term>Méthode MOVPE</term>
<term>Elargissement raie</term>
<term>Argon</term>
<term>Traitement par plasma</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>As Ga In P</term>
<term>InGaAsP</term>
<term>6835F</term>
<term>7855</term>
<term>7867D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this paper, we present an attractive approach of argon plasma-induced quantum well intermixing for InP based heterostructures. The lattice-matched five quantum wells of InGaAs/InGaAsP grown by MOVPE exhibited a large blue shift with minimal line width broadening after plasma exposure and annealing. This large shift occurs due to interdiffusion of high density of point defects created by high ion current density in the inductively coupled plasma system. The interdiffusion creates a high degree of intermixing, with coherent diffusion of the group III and group V elements on their own sublattices. Intermixing results in no material quality degradation that highlights the plasma quantum well intermixing technique is well suited for photonic integration circuit fabrication.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0>
</fA01>
<fA03 i2="1"><s0>Appl. surf. sci.</s0>
</fA03>
<fA05><s2>237</s2>
</fA05>
<fA06><s2>1-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>ACSIN-7: Proceedings of the Seventh International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, Japan, November 16-20, 2003</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>AROKIARAJ (J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DJIE (H. S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MEI (T.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>IWASAKI (Hiroshi)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>ZAIMA (Shigeaki)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>OSHIMA (Chuhei)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>School of Electronic and Electrical Engineering, Nanyang Technological University</s1>
<s2>Singapore 639798</s2>
<s3>SGP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>The Institute of Scientific and Industrial Research, Osaka University</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Center for Cooperative Research in Advanded Science & Technology, Nagoya University</s1>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>School of Science and Engineering, Waseda University</s1>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>Japan Society of Applied Physics</s1>
<s2>Tokyo</s2>
<s3>JPN</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>256-260</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16002</s2>
<s5>354000126102350440</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>13 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>05-0149310</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied surface science</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this paper, we present an attractive approach of argon plasma-induced quantum well intermixing for InP based heterostructures. The lattice-matched five quantum wells of InGaAs/InGaAsP grown by MOVPE exhibited a large blue shift with minimal line width broadening after plasma exposure and annealing. This large shift occurs due to interdiffusion of high density of point defects created by high ion current density in the inductively coupled plasma system. The interdiffusion creates a high degree of intermixing, with coherent diffusion of the group III and group V elements on their own sublattices. Intermixing results in no material quality degradation that highlights the plasma quantum well intermixing technique is well suited for photonic integration circuit fabrication.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H35F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H55</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H67D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Déplacement vers le bleu</s0>
<s5>07</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Blue shift</s0>
<s5>07</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Déplacement raie</s0>
<s5>08</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Spectral line shift</s0>
<s5>08</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>10</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>14</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>14</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>17</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quantum wells</s0>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Diffusion mutuelle</s0>
<s5>19</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Interdiffusion</s0>
<s5>19</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Difusión mútua</s0>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>20</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>20</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Croissance film</s0>
<s5>21</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Film growth</s0>
<s5>21</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>22</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>22</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Elargissement raie</s0>
<s5>23</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Line broadening</s0>
<s5>23</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Argon</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Argon</s0>
<s2>NC</s2>
<s5>25</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Traitement par plasma</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Plasma assisted processing</s0>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>36</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6835F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7855</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>7867D</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s4>INC</s4>
<s5>62</s5>
</fC07>
<fN21><s1>101</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>ACSIN-7 International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures</s1>
<s2>7</s2>
<s3>Nara JPN</s3>
<s4>2003-11-16</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri