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Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

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Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Auteurs : RBID : Pascal:04-0509439

Descripteurs français

Pascal (Inist)
- Croissance cristalline en solution, Semiconducteur III-V, Indium arséniure, Gallium arséniure, Composé binaire, Microgravité, Interface croissance, Modélisation, Simulation numérique, 8110M, 8110D.

English descriptors

KwdEn :
- Binary compounds, Crystal growth from solutions, Digital simulation, Gallium arsenides, Growth interface, III-V semiconductors, Indium arsenides, Microgravity, Modelling.

Abstract

We investigate the crystal growth process of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone (TLZ) method numerically and discuss the possibility of growing a bulk In_0.3Ga_0.7As crystal. First, we explain this new crystal growth technique and then develop a numerical model and calculation method of the growth of binary crystals, by which the flow field in the solution, the temperature and concentration fields in both the solution and crystals, and the shape and movement of the crystal-solution interfaces are determined

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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions</title>
<author><name sortKey="Maekawa, Toru" uniqKey="Maekawa T">Toru Maekawa</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Toyo University, 2100, Kujirai</s1>
<s2>Kawagoe, Saitama 350-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kawagoe, Saitama 350-8585</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sugiki, Yoshihiro" uniqKey="Sugiki Y">Yoshihiro Sugiki</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Toyo University, 2100, Kujirai</s1>
<s2>Kawagoe, Saitama 350-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Kawagoe, Saitama 350-8585</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Matsumoto, Satoshi" uniqKey="Matsumoto S">Satoshi Matsumoto</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Space Development Agency of Japan, 2-1-1, Sengen</s1>
<s2>Tsukuba, Ibaraki 305-8505</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tsukuba, Ibaraki 305-8505</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Adachi, Satoshi" uniqKey="Adachi S">Satoshi Adachi</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Space Development Agency of Japan, 2-1-1, Sengen</s1>
<s2>Tsukuba, Ibaraki 305-8505</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tsukuba, Ibaraki 305-8505</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yoda, Shinichi" uniqKey="Yoda S">Shinichi Yoda</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Space Development Agency of Japan, 2-1-1, Sengen</s1>
<s2>Tsukuba, Ibaraki 305-8505</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tsukuba, Ibaraki 305-8505</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kinoshita, Kyoichi" uniqKey="Kinoshita K">Kyoichi Kinoshita</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Space Development Agency of Japan, 2-1-1, Sengen</s1>
<s2>Tsukuba, Ibaraki 305-8505</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Tsukuba, Ibaraki 305-8505</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0509439</idno>
<date when="2004">2004</date>
<idno type="stanalyst">PASCAL 04-0509439 INIST</idno>
<idno type="RBID">Pascal:04-0509439</idno>
<idno type="wicri:Area/Main/Corpus">00AE52</idno>
<idno type="wicri:Area/Main/Repository">00B035</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0017-9310</idno>
<title level="j" type="abbreviated">Int. j. heat mass transfer</title>
<title level="j" type="main">International journal of heat and mass transfer</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term>
<term>Crystal growth from solutions</term>
<term>Digital simulation</term>
<term>Gallium arsenides</term>
<term>Growth interface</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Microgravity</term>
<term>Modelling</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Croissance cristalline en solution</term>
<term>Semiconducteur III-V</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Composé binaire</term>
<term>Microgravité</term>
<term>Interface croissance</term>
<term>Modélisation</term>
<term>Simulation numérique</term>
<term>8110M</term>
<term>8110D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We investigate the crystal growth process of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone (TLZ) method numerically and discuss the possibility of growing a bulk In<sub>0.3</sub>
Ga<sub>0.7</sub>
As crystal. First, we explain this new crystal growth technique and then develop a numerical model and calculation method of the growth of binary crystals, by which the flow field in the solution, the temperature and concentration fields in both the solution and crystals, and the shape and movement of the crystal-solution interfaces are determined</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0017-9310</s0>
</fA01>
<fA02 i1="01"><s0>IJHMAK</s0>
</fA02>
<fA03 i2="1"><s0>Int. j. heat mass transfer</s0>
</fA03>
<fA05><s2>47</s2>
</fA05>
<fA06><s2>21</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MAEKAWA (Toru)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SUGIKI (Yoshihiro)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MATSUMOTO (Satoshi)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ADACHI (Satoshi)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>YODA (Shinichi)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KINOSHITA (Kyoichi)</s1>
</fA11>
<fA14 i1="01"><s1>Toyo University, 2100, Kujirai</s1>
<s2>Kawagoe, Saitama 350-8585</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>National Space Development Agency of Japan, 2-1-1, Sengen</s1>
<s2>Tsukuba, Ibaraki 305-8505</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>4535-4546</s1>
</fA20>
<fA21><s1>2004</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>9415</s2>
<s5>354000114133670040</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2004 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>04-0509439</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>International journal of heat and mass transfer</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We investigate the crystal growth process of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone (TLZ) method numerically and discuss the possibility of growing a bulk In<sub>0.3</sub>
Ga<sub>0.7</sub>
As crystal. First, we explain this new crystal growth technique and then develop a numerical model and calculation method of the growth of binary crystals, by which the flow field in the solution, the temperature and concentration fields in both the solution and crystals, and the shape and movement of the crystal-solution interfaces are determined</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A10M</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A10D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Croissance cristalline en solution</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Crystal growth from solutions</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Composé binaire</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Binary compounds</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Microgravité</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Microgravity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Interface croissance</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Growth interface</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Interfase crecimiento</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Modélisation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Modelling</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Simulation numérique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Digital simulation</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>8110M</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>8110D</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fN21><s1>285</s1>
</fN21>
<fN44 i1="01"><s1>PSI</s1>
</fN44>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Descripteurs français

English descriptors

Abstract

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