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Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD

Identifieur interne : 00AC11 ( Main/Repository ); précédent : 00AC10; suivant : 00AC12

Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD

Auteurs : RBID : Pascal:05-0081596

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Dépôt chimique phase vapeur, Méthode MOCVD, RBS, Photoluminescence, Diffraction RX, Couche tampon, Absorbance, Dépendance température, Gallium nitrure, Composé binaire, Semiconducteur III-V, Indium nitrure, Composé ternaire, Couche mince, GaN, Ga N, InGaN, Ga In N, 8115G, 7855C, Substrat Al2O3.

English descriptors

KwdEn :
- Absorbance, Binary compounds, Buffer layer, CVD, Crystal growth from vapors, Experimental study, Gallium nitrides, III-V semiconductors, Indium nitrides, MOCVD, Photoluminescence, RBS, Temperature dependence, Ternary compounds, Thin films, XRD.

Abstract

GaN/InN alloy system has attracted an intense interest in high-temperature and high-frequency optoelectronic applications. InGaN can provide a spectral coverage from the near UV to the near IR. Due to the large lattice mismatch between InGaN and sapphire substrates, InGaN is usually deposited on the thick GaN film previously grown on GaN buffer layer on sapphire. The growth of GaN and InGaN films was studied systematically. Crystal quality, optical and electrical properties will be reported using several post-growth analysis techniques, including Rutherford back scattering (RBS), Photoluminescence (PL), absorption spectroscopy and X-ray diffraction (XRD). The effect of temperature and buffer layer annealing time on the film properties were determined. This understanding will lead to better quality control of the optoelectronice devices.

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Pascal:05-0081596

Le document en format XML

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<author><name sortKey="Poochinda, Kunakorn" uniqKey="Poochinda K">Kunakorn Poochinda</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of Washington, Benson Hall, Box 351750</s1>
<s2>Seattle, WA 98195</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Seattle, WA 98195</wicri:noRegion>
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<author><name sortKey="Chen, Tai Chang" uniqKey="Chen T">Tai-Chang Chen</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Washington, Paul Allen, Center, Box 352500</s1>
<s2>Seattle, WA 98195</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Seattle, WA 98195</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Stoebe, Thomas G" uniqKey="Stoebe T">Thomas G. Stoebe</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Materials Science and Engineering, University of Washington, Roberts Hall, Box 352120</s1>
<s2>Seattle, WA 98195</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Seattle, WA 98195</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ricker, N Lawrence" uniqKey="Ricker N">N. Lawrence Ricker</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemical Engineering, University of Washington, Benson Hall, Box 351750</s1>
<s2>Seattle, WA 98195</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Seattle, WA 98195</wicri:noRegion>
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<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorbance</term>
<term>Binary compounds</term>
<term>Buffer layer</term>
<term>CVD</term>
<term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>MOCVD</term>
<term>Photoluminescence</term>
<term>RBS</term>
<term>Temperature dependence</term>
<term>Ternary compounds</term>
<term>Thin films</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Dépôt chimique phase vapeur</term>
<term>Méthode MOCVD</term>
<term>RBS</term>
<term>Photoluminescence</term>
<term>Diffraction RX</term>
<term>Couche tampon</term>
<term>Absorbance</term>
<term>Dépendance température</term>
<term>Gallium nitrure</term>
<term>Composé binaire</term>
<term>Semiconducteur III-V</term>
<term>Indium nitrure</term>
<term>Composé ternaire</term>
<term>Couche mince</term>
<term>GaN</term>
<term>Ga N</term>
<term>InGaN</term>
<term>Ga In N</term>
<term>8115G</term>
<term>7855C</term>
<term>Substrat Al2O3</term>
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<front><div type="abstract" xml:lang="en">GaN/InN alloy system has attracted an intense interest in high-temperature and high-frequency optoelectronic applications. InGaN can provide a spectral coverage from the near UV to the near IR. Due to the large lattice mismatch between InGaN and sapphire substrates, InGaN is usually deposited on the thick GaN film previously grown on GaN buffer layer on sapphire. The growth of GaN and InGaN films was studied systematically. Crystal quality, optical and electrical properties will be reported using several post-growth analysis techniques, including Rutherford back scattering (RBS), Photoluminescence (PL), absorption spectroscopy and X-ray diffraction (XRD). The effect of temperature and buffer layer annealing time on the film properties were determined. This understanding will lead to better quality control of the optoelectronice devices.</div>
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<fA14 i1="01"><s1>Department of Chemical Engineering, University of Washington, Benson Hall, Box 351750</s1>
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<s2>Seattle, WA 98195</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>GaN/InN alloy system has attracted an intense interest in high-temperature and high-frequency optoelectronic applications. InGaN can provide a spectral coverage from the near UV to the near IR. Due to the large lattice mismatch between InGaN and sapphire substrates, InGaN is usually deposited on the thick GaN film previously grown on GaN buffer layer on sapphire. The growth of GaN and InGaN films was studied systematically. Crystal quality, optical and electrical properties will be reported using several post-growth analysis techniques, including Rutherford back scattering (RBS), Photoluminescence (PL), absorption spectroscopy and X-ray diffraction (XRD). The effect of temperature and buffer layer annealing time on the film properties were determined. This understanding will lead to better quality control of the optoelectronice devices.</s0>
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<fC03 i1="17" i2="3" l="FRE"><s0>GaN</s0>
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Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD

Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri