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Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

Identifieur interne : 00A881 ( Main/Repository ); précédent : 00A880; suivant : 00A882

Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

Auteurs : RBID : Pascal:04-0035311

Descripteurs français

Pascal (Inist)
- 8560J, 7855K, 7860F, 7866Q, 7120N, Etude expérimentale, Ruthénium composé, Semiconducteur bande interdite large, Semiconducteur organique, Phosphorescence, Electroluminescence.

English descriptors

KwdEn :
- Electroluminescence, Experimental study, Organic semiconductors, Phosphorescence, Ruthenium compounds, Wide band gap semiconductors, organic light emitting diodes.

Abstract

Red electrophosphorescence from light-emitting devices based on ruthenium(II)-complex [Ru(4,7-Ph₂-phen)₃]²⁺-doped wide-band-gap semiconductive polymers, i.e., poly(vinylcarbazole) (PVK), polydihexylfluorene (PDHF), and ladderlike polyphenylene (LPPP), as the emitting layers are reported. However, only highly efficient energy transfer was investigated in a PVK system, not only because of the relatively longer lifetime of its excited state compared with PDHF and LPPP, but also because of the good chemical compatibility of [Ru(4,7-Ph₂-phen)₃]²⁺ with PVK. The EL spectra show the characteristic spectrum of [Ru(4,7-Ph₂-phen)₃]²⁺, at a peak of 612 nm and Commission Internationale delEclairage of (0.62, 0.37). The optimized device indium tin oxide/PVK: 5 wt% [Ru(4,7-Ph₂-phen)₃]²⁺/PBD/Alq₃/LiF/Al shows the maximum luminance efficiency and power efficiency as 8.6 cd/A and 2.1 lm/W, respectively. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Xia, Hong" uniqKey="Xia H">Hong Xia</name>
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<author><name sortKey="Zhang, Chengbo" uniqKey="Zhang C">Chengbo Zhang</name>
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<author><name sortKey="Qiu, Song" uniqKey="Qiu S">Song Qiu</name>
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<author><name sortKey="Lu, Ping" uniqKey="Lu P">Ping Lu</name>
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<author><name sortKey="Zhang, Jingying" uniqKey="Zhang J">Jingying Zhang</name>
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<author><name sortKey="Ma, Yuguang" uniqKey="Ma Y">Yuguang Ma</name>
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<front><div type="abstract" xml:lang="en">Red electrophosphorescence from light-emitting devices based on ruthenium(II)-complex [Ru(4,7-Ph<sub>2</sub>
-phen)<sub>3</sub>
]<sup>2+</sup>
-doped wide-band-gap semiconductive polymers, i.e., poly(vinylcarbazole) (PVK), polydihexylfluorene (PDHF), and ladderlike polyphenylene (LPPP), as the emitting layers are reported. However, only highly efficient energy transfer was investigated in a PVK system, not only because of the relatively longer lifetime of its excited state compared with PDHF and LPPP, but also because of the good chemical compatibility of [Ru(4,7-Ph<sub>2</sub>
-phen)<sub>3</sub>
]<sup>2+</sup>
 with PVK. The EL spectra show the characteristic spectrum of [Ru(4,7-Ph<sub>2</sub>
-phen)<sub>3</sub>
]<sup>2+</sup>
, at a peak of 612 nm and Commission Internationale delEclairage of (0.62, 0.37). The optimized device indium tin oxide/PVK: 5 wt% [Ru(4,7-Ph<sub>2</sub>
-phen)<sub>3</sub>
]<sup>2+</sup>
/PBD/Alq<sub>3</sub>
/LiF/Al shows the maximum luminance efficiency and power efficiency as 8.6 cd/A and 2.1 lm/W, respectively. © 2004 American Institute of Physics.</div>
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-phen)<sub>3</sub>
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Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

Highly efficient red phosphorescent light-emitting diodes based on ruthenium(II)-complex-doped semiconductive polymers

Descripteurs français

English descriptors

Abstract

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