Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
Identifieur interne : 00A844 ( Main/Repository ); précédent : 00A843; suivant : 00A845Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
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Abstract
InAs quantum dots grown on In0.53Ga0.47As/InP(001) substrate by low-pressure metalorganic chemical vapor deposition were investigated using high-angle annular dark-field imaging. Results suggest significant mass transport of mainly the large-sized component (InAs) from the In0.53Ga0.47As substrate to InAs quantum dots, an unexpected process that increases the system strain energy. The amount of the transported mass increases with quantum dot size. Two monolayers of GaAs inserted between InAs islands and the InGaAs substrate appears to block or at least effectively slow down this mass transport process. © 2004 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Quantum dot/substrate interaction in InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP(001)</title><author><name sortKey="Liao, X Z" uniqKey="Liao X">X. Z. Liao</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Los Alamos National Laboratory, Los Alamos, New Mexico 87545</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Los Alamos National Laboratory, Los Alamos</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Department of Earth & Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Department of Earth & Planetary Sciences, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Zhu, Y T" uniqKey="Zhu Y">Y. T. Zhu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Los Alamos National Laboratory, Los Alamos, New Mexico 87545</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Los Alamos National Laboratory, Los Alamos</wicri:cityArea></affiliation></author><author><name sortKey="Qiu, Y M" uniqKey="Qiu Y">Y. M. Qiu</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Jet Propulsion Laboratory, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Uhl, D" uniqKey="Uhl D">D. Uhl</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Jet Propulsion Laboratory, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Xu, H F" uniqKey="Xu H">H. F. Xu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Los Alamos National Laboratory, Los Alamos, New Mexico 87545</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Los Alamos National Laboratory, Los Alamos</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0055838</idno><date when="2004-01-26">2004-01-26</date><idno type="stanalyst">PASCAL 04-0055838 AIP</idno><idno type="RBID">Pascal:04-0055838</idno><idno type="wicri:Area/Main/Corpus">00C077</idno><idno type="wicri:Area/Main/Repository">00A844</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>MOCVD</term><term>Monolayers</term><term>Semiconductor growth</term><term>Semiconductor quantum dots</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8107T</term><term>8105E</term><term>8115G</term><term>6865H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Méthode MOCVD</term><term>Croissance semiconducteur</term><term>Couche monomoléculaire</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InAs quantum dots grown on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP(001) substrate by low-pressure metalorganic chemical vapor deposition were investigated using high-angle annular dark-field imaging. Results suggest significant mass transport of mainly the large-sized component (InAs) from the In<sub>0.53</sub>Ga<sub>0.47</sub>As substrate to InAs quantum dots, an unexpected process that increases the system strain energy. The amount of the transported mass increases with quantum dot size. Two monolayers of GaAs inserted between InAs islands and the InGaAs substrate appears to block or at least effectively slow down this mass transport process. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Quantum dot/substrate interaction in InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP(001)</s1></fA08><fA11 i1="01" i2="1"><s1>LIAO (X. Z.)</s1></fA11><fA11 i1="02" i2="1"><s1>ZHU (Y. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>QIU (Y. M.)</s1></fA11><fA11 i1="04" i2="1"><s1>UHL (D.)</s1></fA11><fA11 i1="05" i2="1"><s1>XU (H. F.)</s1></fA11><fA14 i1="01"><s1>Los Alamos National Laboratory, Los Alamos, New Mexico 87545</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Earth & Planetary Sciences, University of New Mexico, Albuquerque, New Mexico 87131</s1></fA14><fA20><s1>511-513</s1></fA20><fA21><s1>2004-01-26</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0055838</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>InAs quantum dots grown on In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP(001) substrate by low-pressure metalorganic chemical vapor deposition were investigated using high-angle annular dark-field imaging. Results suggest significant mass transport of mainly the large-sized component (InAs) from the In<sub>0.53</sub>Ga<sub>0.47</sub>As substrate to InAs quantum dots, an unexpected process that increases the system strain energy. The amount of the transported mass increases with quantum dot size. Two monolayers of GaAs inserted between InAs islands and the InGaAs substrate appears to block or at least effectively slow down this mass transport process. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H65</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8107T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6865H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Point quantique semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor quantum dots</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Couche monomoléculaire</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Monolayers</s0></fC03><fN21><s1>033</s1></fN21><fN47 i1="01" i2="1"><s0>0404M000037</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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