Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency
Identifieur interne : 00A689 ( Main/Repository ); précédent : 00A688; suivant : 00A690Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency
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Abstract
We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The IH2 concentration was found to depend on the B concentration, becoming smaller as the B concentration became larger. It also depended on the species of group-III dopants. Hence the replacement efficiency of I and group-III impurities depended on the concentration and species of group-III dopants.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency</title><author><name sortKey="Tokuyama, Y" uniqKey="Tokuyama Y">Y. Tokuyama</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Suezawa, M" uniqKey="Suezawa M">M. Suezawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Fukata, N" uniqKey="Fukata N">N. Fukata</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Institute for Materials Research, Tohoku University, Sendai 980-8577</wicri:regionArea><wicri:noRegion>Sendai 980-8577</wicri:noRegion></affiliation></author><author><name sortKey="Taishi, T" uniqKey="Taishi T">T. Taishi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Education, Shinshu University, Nagano 380-0871, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Faculty of Education, Shinshu University, Nagano 380-0871</wicri:regionArea><wicri:noRegion>Nagano 380-0871</wicri:noRegion></affiliation></author><author><name sortKey="Hoshikawa, K" uniqKey="Hoshikawa K">K. Hoshikawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Faculty of Education, Shinshu University, Nagano 380-0871, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Faculty of Education, Shinshu University, Nagano 380-0871</wicri:regionArea><wicri:noRegion>Nagano 380-0871</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0167561</idno><date when="2004-03-15">2004-03-15</date><idno type="stanalyst">PASCAL 04-0167561 AIP</idno><idno type="RBID">Pascal:04-0167561</idno><idno type="wicri:Area/Main/Corpus">00BB07</idno><idno type="wicri:Area/Main/Repository">00A689</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Boron</term><term>Crystal growth from melts</term><term>Doping profiles</term><term>Elemental semiconductors</term><term>Experimental study</term><term>Gallium</term><term>Hydrogenation</term><term>Impurities</term><term>Indium</term><term>Interstitials</term><term>Semiconductor doping</term><term>Silicon</term><term>Zone melting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172J</term><term>6180F</term><term>6182F</term><term>Etude expérimentale</term><term>Interstitiel</term><term>Dopage semiconducteur</term><term>Impureté</term><term>Semiconducteur élémentaire</term><term>Silicium</term><term>Fusion zone</term><term>Croissance cristalline en phase fondue</term><term>Profil dopage</term><term>Bore</term><term>Aluminium</term><term>Gallium</term><term>Indium</term><term>Hydrogénation</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH<sub>2</sub>, a complex of one self-interstitial (I) and two H atoms. If the IH<sub>2</sub> concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The IH<sub>2</sub> concentration was found to depend on the B concentration, becoming smaller as the B concentration became larger. It also depended on the species of group-III dopants. Hence the replacement efficiency of I and group-III impurities depended on the concentration and species of group-III dopants.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>69</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency</s1></fA08><fA11 i1="01" i2="1"><s1>TOKUYAMA (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>SUEZAWA (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>FUKATA (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>TAISHI (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>HOSHIKAWA (K.)</s1></fA11><fA14 i1="01"><s1>Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Faculty of Education, Shinshu University, Nagano 380-0871, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s2>125217-125217-7</s2></fA20><fA21><s1>2004-03-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0167561</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH<sub>2</sub>, a complex of one self-interstitial (I) and two H atoms. If the IH<sub>2</sub> concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. 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