Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency
Identifieur interne : 00A689 ( Main/Repository ); précédent : 00A688; suivant : 00A690Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency
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Abstract
We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The IH2 concentration was found to depend on the B concentration, becoming smaller as the B concentration became larger. It also depended on the species of group-III dopants. Hence the replacement efficiency of I and group-III impurities depended on the concentration and species of group-III dopants.
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<author><name sortKey="Tokuyama, Y" uniqKey="Tokuyama Y">Y. Tokuyama</name>
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<author><name sortKey="Suezawa, M" uniqKey="Suezawa M">M. Suezawa</name>
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<author><name sortKey="Fukata, N" uniqKey="Fukata N">N. Fukata</name>
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<author><name sortKey="Taishi, T" uniqKey="Taishi T">T. Taishi</name>
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<author><name sortKey="Hoshikawa, K" uniqKey="Hoshikawa K">K. Hoshikawa</name>
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<front><div type="abstract" xml:lang="en">We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH<sub>2</sub>
, a complex of one self-interstitial (I) and two H atoms. If the IH<sub>2</sub>
concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The IH<sub>2</sub>
concentration was found to depend on the B concentration, becoming smaller as the B concentration became larger. It also depended on the species of group-III dopants. Hence the replacement efficiency of I and group-III impurities depended on the concentration and species of group-III dopants.</div>
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concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The IH<sub>2</sub>
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