IndiumV3, Main, Repository, bibRecord, 009047

Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

Identifieur interne : 009047 ( Main/Repository ); précédent : 009046; suivant : 009048

Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

Auteurs : RBID : Pascal:06-0505956

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Discontinuité bande, Effet concentration, Bande conduction, Bande valence, Confinement, Photoconductivité, Epitaxie jet moléculaire, Méthode SSMBE, Croissance cristalline en phase vapeur, Puits quantique, Nanomatériau, Indium nitrure, Gallium nitrure, Arsenic Nitrure, Composé quaternaire, Semiconducteur III-V, InGaAsN, As Ga In N, Substrat GaAs, 8107S.

English descriptors

KwdEn :
- Arsenic Nitrides, Band offset, Conduction bands, Confinement, Crystal growth from vapors, Experimental study, Gallium nitrides, III-V semiconductors, Indium nitrides, Molecular beam epitaxy, Nanostructured materials, Photoconductivity, Quantity ratio, Quantum wells, Quaternary compounds, Solid source molecular beam epitaxy, Valence bands.

Abstract

The band offsets of InGaAsN single quantum well samples with different indium and nitrogen concentrations have been determined by surface photo-voltage measurements. With varying indium content in the quantum well, both the conduction and the valence band states are modified. On the other hand, nitrogen content variations affect only the conduction band states and leave the valence band states basically unchanged. In particular, the value of the conduction band offset ratio increases with increasing nitrogen content and decreases with increasing indium concentration. This effect shows the possibility to design structures with a fixed band gap but varied confinement of electrons and holes by changing the In/N ratio.

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Pascal:06-0505956

Le document en format XML

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<author><name sortKey="Galluppi, Massimo" uniqKey="Galluppi M">Massimo Galluppi</name>
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<s2>81730 Munich</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="1">Bavière</region>
<region type="district" nuts="2">District de Haute-Bavière</region>
<settlement type="city">Munich</settlement>
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<author><name sortKey="Geelhaar, Lutz" uniqKey="Geelhaar L">Lutz Geelhaar</name>
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<s2>81730 Munich</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>Allemagne</country>
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<region type="district" nuts="2">District de Haute-Bavière</region>
<settlement type="city">Munich</settlement>
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</author>
<author><name sortKey="Riechert, Henning" uniqKey="Riechert H">Henning Riechert</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Infineon Technologies, Corporate Research</s1>
<s2>81730 Munich</s2>
<s3>DEU</s3>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<region type="district" nuts="2">District de Haute-Bavière</region>
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<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic Nitrides</term>
<term>Band offset</term>
<term>Conduction bands</term>
<term>Confinement</term>
<term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>Gallium nitrides</term>
<term>III-V semiconductors</term>
<term>Indium nitrides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Photoconductivity</term>
<term>Quantity ratio</term>
<term>Quantum wells</term>
<term>Quaternary compounds</term>
<term>Solid source molecular beam epitaxy</term>
<term>Valence bands</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Discontinuité bande</term>
<term>Effet concentration</term>
<term>Bande conduction</term>
<term>Bande valence</term>
<term>Confinement</term>
<term>Photoconductivité</term>
<term>Epitaxie jet moléculaire</term>
<term>Méthode SSMBE</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Puits quantique</term>
<term>Nanomatériau</term>
<term>Indium nitrure</term>
<term>Gallium nitrure</term>
<term>Arsenic Nitrure</term>
<term>Composé quaternaire</term>
<term>Semiconducteur III-V</term>
<term>InGaAsN</term>
<term>As Ga In N</term>
<term>Substrat GaAs</term>
<term>8107S</term>
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<front><div type="abstract" xml:lang="en">The band offsets of InGaAsN single quantum well samples with different indium and nitrogen concentrations have been determined by surface photo-voltage measurements. With varying indium content in the quantum well, both the conduction and the valence band states are modified. On the other hand, nitrogen content variations affect only the conduction band states and leave the valence band states basically unchanged. In particular, the value of the conduction band offset ratio increases with increasing nitrogen content and decreases with increasing indium concentration. This effect shows the possibility to design structures with a fixed band gap but varied confinement of electrons and holes by changing the In/N ratio.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements</s1>
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<fC01 i1="01" l="ENG"><s0>The band offsets of InGaAsN single quantum well samples with different indium and nitrogen concentrations have been determined by surface photo-voltage measurements. With varying indium content in the quantum well, both the conduction and the valence band states are modified. On the other hand, nitrogen content variations affect only the conduction band states and leave the valence band states basically unchanged. In particular, the value of the conduction band offset ratio increases with increasing nitrogen content and decreases with increasing indium concentration. This effect shows the possibility to design structures with a fixed band gap but varied confinement of electrons and holes by changing the In/N ratio.</s0>
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<s4>INC</s4>
<s5>54</s5>
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<s5>56</s5>
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Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri